Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application
In this study, a radio-frequency magnetron sputter system was used to deposit Al<sub>2</sub>O<sub>3</sub> doped ZnO (AZO) thin films at room temperature, and the soda lime glass (SLG) substrates were placed at different zones relative to the center of the sample holder under...
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2021
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oai:doaj.org-article:1404f566ee9e49ae8aa266d186b40d192021-11-11T17:53:03ZLocation-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application10.3390/ma142163131996-1944https://doaj.org/article/1404f566ee9e49ae8aa266d186b40d192021-10-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6313https://doaj.org/toc/1996-1944In this study, a radio-frequency magnetron sputter system was used to deposit Al<sub>2</sub>O<sub>3</sub> doped ZnO (AZO) thin films at room temperature, and the soda lime glass (SLG) substrates were placed at different zones relative to the center of the sample holder under the target. The samples were then analyzed using an X-ray diffractometer, Hall-effect measurement system, UV-visible spectrophotometer, and X-ray photoelectron spectroscopy. It was found that the electrical, structural, and optical properties of AZO films strongly depend on the target racetrack. The AZO thin film grown at a location outside the racetrack not only has the most suitable figure of merit for transparent conductive films, but also retains the least residual stress, which makes it the most suitable candidate for use as a CZTSe transparent conductive layer. When applied to CZTSe solar cells, the photoelectric efficiency is 3.56%.Fang-I LaiJui-Fu YangYu-Chao HsuShou-Yi KuoMDPI AGarticleCZTSe solar cellAZO filmRF magnetron sputteringTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6313, p 6313 (2021) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
CZTSe solar cell AZO film RF magnetron sputtering Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
| spellingShingle |
CZTSe solar cell AZO film RF magnetron sputtering Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Fang-I Lai Jui-Fu Yang Yu-Chao Hsu Shou-Yi Kuo Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application |
| description |
In this study, a radio-frequency magnetron sputter system was used to deposit Al<sub>2</sub>O<sub>3</sub> doped ZnO (AZO) thin films at room temperature, and the soda lime glass (SLG) substrates were placed at different zones relative to the center of the sample holder under the target. The samples were then analyzed using an X-ray diffractometer, Hall-effect measurement system, UV-visible spectrophotometer, and X-ray photoelectron spectroscopy. It was found that the electrical, structural, and optical properties of AZO films strongly depend on the target racetrack. The AZO thin film grown at a location outside the racetrack not only has the most suitable figure of merit for transparent conductive films, but also retains the least residual stress, which makes it the most suitable candidate for use as a CZTSe transparent conductive layer. When applied to CZTSe solar cells, the photoelectric efficiency is 3.56%. |
| format |
article |
| author |
Fang-I Lai Jui-Fu Yang Yu-Chao Hsu Shou-Yi Kuo |
| author_facet |
Fang-I Lai Jui-Fu Yang Yu-Chao Hsu Shou-Yi Kuo |
| author_sort |
Fang-I Lai |
| title |
Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application |
| title_short |
Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application |
| title_full |
Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application |
| title_fullStr |
Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application |
| title_full_unstemmed |
Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application |
| title_sort |
location-optoelectronic property correlation in zno:al thin film by rf magnetron sputtering and its photovoltaic application |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/1404f566ee9e49ae8aa266d186b40d19 |
| work_keys_str_mv |
AT fangilai locationoptoelectronicpropertycorrelationinznoalthinfilmbyrfmagnetronsputteringanditsphotovoltaicapplication AT juifuyang locationoptoelectronicpropertycorrelationinznoalthinfilmbyrfmagnetronsputteringanditsphotovoltaicapplication AT yuchaohsu locationoptoelectronicpropertycorrelationinznoalthinfilmbyrfmagnetronsputteringanditsphotovoltaicapplication AT shouyikuo locationoptoelectronicpropertycorrelationinznoalthinfilmbyrfmagnetronsputteringanditsphotovoltaicapplication |
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1718431987201474560 |