Scaling growth rates for perovskite oxide virtual substrates on silicon

A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov, Roman Engel-Herbert
Format: article
Langue:EN
Publié: Nature Portfolio 2019
Sujets:
Q
Accès en ligne:https://doaj.org/article/146788c55af2477b9335976ba68c3407
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
Description
Résumé:A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.