Scaling growth rates for perovskite oxide virtual substrates on silicon

A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.

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Detalles Bibliográficos
Autores principales: Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov, Roman Engel-Herbert
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/146788c55af2477b9335976ba68c3407
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Sumario:A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.