Scaling growth rates for perovskite oxide virtual substrates on silicon
A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.
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| Auteurs principaux: | , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2019
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/146788c55af2477b9335976ba68c3407 |
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| Résumé: | A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy. |
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