Scaling growth rates for perovskite oxide virtual substrates on silicon

A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.

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Autores principales:	Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov, Roman Engel-Herbert
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/146788c55af2477b9335976ba68c3407
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spelling	oai:doaj.org-article:146788c55af2477b9335976ba68c34072021-12-02T17:01:52ZScaling growth rates for perovskite oxide virtual substrates on silicon10.1038/s41467-019-10273-22041-1723https://doaj.org/article/146788c55af2477b9335976ba68c34072019-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-10273-2https://doaj.org/toc/2041-1723A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.Jason LapanoMatthew BrahlekLei ZhangJoseph RothAlexej PogrebnyakovRoman Engel-HerbertNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Jason Lapano Matthew Brahlek Lei Zhang Joseph Roth Alexej Pogrebnyakov Roman Engel-Herbert Scaling growth rates for perovskite oxide virtual substrates on silicon
description	A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.
format	article
author	Jason Lapano Matthew Brahlek Lei Zhang Joseph Roth Alexej Pogrebnyakov Roman Engel-Herbert
author_facet	Jason Lapano Matthew Brahlek Lei Zhang Joseph Roth Alexej Pogrebnyakov Roman Engel-Herbert
author_sort	Jason Lapano
title	Scaling growth rates for perovskite oxide virtual substrates on silicon
title_short	Scaling growth rates for perovskite oxide virtual substrates on silicon
title_full	Scaling growth rates for perovskite oxide virtual substrates on silicon
title_fullStr	Scaling growth rates for perovskite oxide virtual substrates on silicon
title_full_unstemmed	Scaling growth rates for perovskite oxide virtual substrates on silicon
title_sort	scaling growth rates for perovskite oxide virtual substrates on silicon
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/146788c55af2477b9335976ba68c3407
work_keys_str_mv	AT jasonlapano scalinggrowthratesforperovskiteoxidevirtualsubstratesonsilicon AT matthewbrahlek scalinggrowthratesforperovskiteoxidevirtualsubstratesonsilicon AT leizhang scalinggrowthratesforperovskiteoxidevirtualsubstratesonsilicon AT josephroth scalinggrowthratesforperovskiteoxidevirtualsubstratesonsilicon AT alexejpogrebnyakov scalinggrowthratesforperovskiteoxidevirtualsubstratesonsilicon AT romanengelherbert scalinggrowthratesforperovskiteoxidevirtualsubstratesonsilicon
_version_	1718382010280443904

Scaling growth rates for perovskite oxide virtual substrates on silicon

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