Ellipsometric studies of nanometric CdS and CdTe films
The thickness of the layers CdS and CdTe grown on the Si, Ge, GaAs was determined from the analysis of the polarization ellipse of the reflected light from the surfaces of structures thin layers substrate. The thermal treatment of the samples CdS-CdTe in the presence of CdCl2 leads to the increasing...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/147caaf19e7d4600a6b0b71d0cda388e |
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| Sumario: | The thickness of the layers CdS and CdTe grown on the Si, Ge, GaAs was determined from the analysis of the polarization ellipse of the reflected light from the surfaces of structures thin layers substrate. The thermal treatment of the samples CdS-CdTe in the presence of CdCl2 leads to the increasing of the crystalline phase from layers. |
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