Ellipsometric studies of nanometric CdS and CdTe films

The thickness of the layers CdS and CdTe grown on the Si, Ge, GaAs was determined from the analysis of the polarization ellipse of the reflected light from the surfaces of structures thin layers substrate. The thermal treatment of the samples CdS-CdTe in the presence of CdCl2 leads to the increasing...

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Autores principales:	Caraman, Mihail, Evtodiev, Igor, Rusu, Marin, Salaoru, Iurie, Vatavu-Cuculescu, Elmira
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/147caaf19e7d4600a6b0b71d0cda388e
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spelling	oai:doaj.org-article:147caaf19e7d4600a6b0b71d0cda388e2021-11-21T12:13:40ZEllipsometric studies of nanometric CdS and CdTe films2537-63651810-648Xhttps://doaj.org/article/147caaf19e7d4600a6b0b71d0cda388e2005-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3082https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The thickness of the layers CdS and CdTe grown on the Si, Ge, GaAs was determined from the analysis of the polarization ellipse of the reflected light from the surfaces of structures thin layers substrate. The thermal treatment of the samples CdS-CdTe in the presence of CdCl2 leads to the increasing of the crystalline phase from layers.Caraman, MihailEvtodiev, IgorRusu, MarinSalaoru, IurieVatavu-Cuculescu, ElmiraD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 1, Pp 114-118 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Caraman, Mihail Evtodiev, Igor Rusu, Marin Salaoru, Iurie Vatavu-Cuculescu, Elmira Ellipsometric studies of nanometric CdS and CdTe films
description	The thickness of the layers CdS and CdTe grown on the Si, Ge, GaAs was determined from the analysis of the polarization ellipse of the reflected light from the surfaces of structures thin layers substrate. The thermal treatment of the samples CdS-CdTe in the presence of CdCl2 leads to the increasing of the crystalline phase from layers.
format	article
author	Caraman, Mihail Evtodiev, Igor Rusu, Marin Salaoru, Iurie Vatavu-Cuculescu, Elmira
author_facet	Caraman, Mihail Evtodiev, Igor Rusu, Marin Salaoru, Iurie Vatavu-Cuculescu, Elmira
author_sort	Caraman, Mihail
title	Ellipsometric studies of nanometric CdS and CdTe films
title_short	Ellipsometric studies of nanometric CdS and CdTe films
title_full	Ellipsometric studies of nanometric CdS and CdTe films
title_fullStr	Ellipsometric studies of nanometric CdS and CdTe films
title_full_unstemmed	Ellipsometric studies of nanometric CdS and CdTe films
title_sort	ellipsometric studies of nanometric cds and cdte films
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/147caaf19e7d4600a6b0b71d0cda388e
work_keys_str_mv	AT caramanmihail ellipsometricstudiesofnanometriccdsandcdtefilms AT evtodievigor ellipsometricstudiesofnanometriccdsandcdtefilms AT rusumarin ellipsometricstudiesofnanometriccdsandcdtefilms AT salaoruiurie ellipsometricstudiesofnanometriccdsandcdtefilms AT vatavucuculescuelmira ellipsometricstudiesofnanometriccdsandcdtefilms
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Ellipsometric studies of nanometric CdS and CdTe films

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