Intrinsic valley Hall transport in atomically thin MoS2

Intrinsic valley Hall transport in atomically thin MoS2

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom. Here, the authors observe room-temperature valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2 by purely electronic means, whereas no valley si...

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Detalles Bibliográficos
Autores principales: Zefei Wu, Benjamin T. Zhou, Xiangbin Cai, Patrick Cheung, Gui-Bin Liu, Meizhen Huang, Jiangxiazi Lin, Tianyi Han, Liheng An, Yuanwei Wang, Shuigang Xu, Gen Long, Chun Cheng, Kam Tuen Law, Fan Zhang, Ning Wang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/148485cfc1f242d4b7672d3b7d8fdce4
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Sumario:Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom. Here, the authors observe room-temperature valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2 by purely electronic means, whereas no valley signal is detected for centrosymmetric bilayer MoS2.

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