Bidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing
Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is the continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<...
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2021
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oai:doaj.org-article:15a44b6792884569943c766c7c820fa22021-11-11T15:41:02ZBidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing10.3390/electronics102126922079-9292https://doaj.org/article/15a44b6792884569943c766c7c820fa22021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/21/2692https://doaj.org/toc/2079-9292Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is the continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<sub>16</sub> iPCM with a superlattice structure under optimized identical pulse trains. By atomically controlling the Ge switch in the phase transition that appears in the GeTe/Sb<sub>2</sub>Te<sub>3</sub> superlattice structure, multiple conductance states were implemented by applying the appropriate electrical pulses. Furthermore, we found that the bidirectional switching behavior of a (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<sub>16</sub> iPCM can achieve a desired resistance level by using the pulse width. Therefore, we fabricated a Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> PCM and designed a pulse scheme, which was based on the phase transition mechanism, to compare to the (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<sub>16</sub> iPCM. We also designed an identical pulse scheme that implements both linear and symmetrical LTP and LTD, based on the iPCM mechanism. As a result, the (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<sub>16</sub> iPCM showed relatively excellent synaptic characteristics by implementing a gradual conductance modulation, a nonlinearity value of 0.32, and 40 LTP/LTD conductance states by using identical pulse trains. Our results demonstrate the general applicability of the artificial synaptic device for potential use in neuro-inspired computing and next-generation, non-volatile memory.Shin-young KangSoo-min JinJu-young LeeDae-seong WooTae-hun ShimIn-ho NamJea-gun ParkYuji SutouYun-heub SongMDPI AGarticleinterfacial phase change memoryphase change memoryartificial synaptic devicesuperlatticeneuromorphic devicesElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2692, p 2692 (2021) |
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DOAJ |
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EN |
| topic |
interfacial phase change memory phase change memory artificial synaptic device superlattice neuromorphic devices Electronics TK7800-8360 |
| spellingShingle |
interfacial phase change memory phase change memory artificial synaptic device superlattice neuromorphic devices Electronics TK7800-8360 Shin-young Kang Soo-min Jin Ju-young Lee Dae-seong Woo Tae-hun Shim In-ho Nam Jea-gun Park Yuji Sutou Yun-heub Song Bidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing |
| description |
Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is the continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<sub>16</sub> iPCM with a superlattice structure under optimized identical pulse trains. By atomically controlling the Ge switch in the phase transition that appears in the GeTe/Sb<sub>2</sub>Te<sub>3</sub> superlattice structure, multiple conductance states were implemented by applying the appropriate electrical pulses. Furthermore, we found that the bidirectional switching behavior of a (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<sub>16</sub> iPCM can achieve a desired resistance level by using the pulse width. Therefore, we fabricated a Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> PCM and designed a pulse scheme, which was based on the phase transition mechanism, to compare to the (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<sub>16</sub> iPCM. We also designed an identical pulse scheme that implements both linear and symmetrical LTP and LTD, based on the iPCM mechanism. As a result, the (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<sub>16</sub> iPCM showed relatively excellent synaptic characteristics by implementing a gradual conductance modulation, a nonlinearity value of 0.32, and 40 LTP/LTD conductance states by using identical pulse trains. Our results demonstrate the general applicability of the artificial synaptic device for potential use in neuro-inspired computing and next-generation, non-volatile memory. |
| format |
article |
| author |
Shin-young Kang Soo-min Jin Ju-young Lee Dae-seong Woo Tae-hun Shim In-ho Nam Jea-gun Park Yuji Sutou Yun-heub Song |
| author_facet |
Shin-young Kang Soo-min Jin Ju-young Lee Dae-seong Woo Tae-hun Shim In-ho Nam Jea-gun Park Yuji Sutou Yun-heub Song |
| author_sort |
Shin-young Kang |
| title |
Bidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing |
| title_short |
Bidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing |
| title_full |
Bidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing |
| title_fullStr |
Bidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing |
| title_full_unstemmed |
Bidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing |
| title_sort |
bidirectional electric-induced conductance based on gete/sb<sub>2</sub>te<sub>3</sub> interfacial phase change memory for neuro-inspired computing |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/15a44b6792884569943c766c7c820fa2 |
| work_keys_str_mv |
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