Bidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing

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Bidirectional Electric-Induced Conductance Based on GeTe/Sb<sub>2</sub>Te<sub>3</sub> Interfacial Phase Change Memory for Neuro-Inspired Computing

Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is the continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb<sub>2</sub>Te<sub>3</sub>)<...

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Detalles Bibliográficos
Autores principales:	Shin-young Kang, Soo-min Jin, Ju-young Lee, Dae-seong Woo, Tae-hun Shim, In-ho Nam, Jea-gun Park, Yuji Sutou, Yun-heub Song
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	interfacial phase change memory phase change memory artificial synaptic device superlattice neuromorphic devices Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/15a44b6792884569943c766c7c820fa2
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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