IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels

Abstract We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its...

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Autores principales: Sozo Yokogawa, Itaru Oshiyama, Harumi Ikeda, Yoshiki Ebiko, Tomoyuki Hirano, Suguru Saito, Takashi Oinoue, Yoshiya Hagimoto, Hayato Iwamoto
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Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/16be2a0f87194729aa205b6c3d07b156
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spelling oai:doaj.org-article:16be2a0f87194729aa205b6c3d07b1562021-12-02T12:30:17ZIR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels10.1038/s41598-017-04200-y2045-2322https://doaj.org/article/16be2a0f87194729aa205b6c3d07b1562017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04200-yhttps://doaj.org/toc/2045-2322Abstract We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700–1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.Sozo YokogawaItaru OshiyamaHarumi IkedaYoshiki EbikoTomoyuki HiranoSuguru SaitoTakashi OinoueYoshiya HagimotoHayato IwamotoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Sozo Yokogawa
Itaru Oshiyama
Harumi Ikeda
Yoshiki Ebiko
Tomoyuki Hirano
Suguru Saito
Takashi Oinoue
Yoshiya Hagimoto
Hayato Iwamoto
IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels
description Abstract We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700–1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.
format article
author Sozo Yokogawa
Itaru Oshiyama
Harumi Ikeda
Yoshiki Ebiko
Tomoyuki Hirano
Suguru Saito
Takashi Oinoue
Yoshiya Hagimoto
Hayato Iwamoto
author_facet Sozo Yokogawa
Itaru Oshiyama
Harumi Ikeda
Yoshiki Ebiko
Tomoyuki Hirano
Suguru Saito
Takashi Oinoue
Yoshiya Hagimoto
Hayato Iwamoto
author_sort Sozo Yokogawa
title IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels
title_short IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels
title_full IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels
title_fullStr IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels
title_full_unstemmed IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels
title_sort ir sensitivity enhancement of cmos image sensor with diffractive light trapping pixels
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/16be2a0f87194729aa205b6c3d07b156
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