IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels

Abstract We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its...

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Autores principales: Sozo Yokogawa, Itaru Oshiyama, Harumi Ikeda, Yoshiki Ebiko, Tomoyuki Hirano, Suguru Saito, Takashi Oinoue, Yoshiya Hagimoto, Hayato Iwamoto
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/16be2a0f87194729aa205b6c3d07b156
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