Development of dissipative structures on surface of dielectric liquid in electrostatic field
The transition of plane surface of liquid dielectric charged with the electrical charge in the electrostatic field in the periodical gofer surface of crater type deformation is researched. It was proved for the first time that the apparition of dissipative structures keeps not optical character but...
Guardado en:
Autores principales: | , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
|
Materias: | |
Acceso en línea: | https://doaj.org/article/170d2ed2880f461285bf343dedcced1e |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
id |
oai:doaj.org-article:170d2ed2880f461285bf343dedcced1e |
---|---|
record_format |
dspace |
spelling |
oai:doaj.org-article:170d2ed2880f461285bf343dedcced1e2021-11-21T12:12:50ZDevelopment of dissipative structures on surface of dielectric liquid in electrostatic field2537-63651810-648Xhttps://doaj.org/article/170d2ed2880f461285bf343dedcced1e2005-03-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3200https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The transition of plane surface of liquid dielectric charged with the electrical charge in the electrostatic field in the periodical gofer surface of crater type deformation is researched. It was proved for the first time that the apparition of dissipative structures keeps not optical character but thermal and is not conditioned by the presence of the photo sensible semiconductor layer. It was established that the development of dissipative structures on the surface of dielectric liquid includes in itself the mechanism of initiation of germination deformations and a mechanism of multiplication of the centers of new deformations in the free volume of germination deformation. Constantinov, BorisPasecinic, TeodosieUntilă, PanteleiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 2, Pp 245-258 (2005) |
institution |
DOAJ |
collection |
DOAJ |
language |
EN |
topic |
Physics QC1-999 Electronics TK7800-8360 |
spellingShingle |
Physics QC1-999 Electronics TK7800-8360 Constantinov, Boris Pasecinic, Teodosie Untilă, Pantelei Development of dissipative structures on surface of dielectric liquid in electrostatic field |
description |
The transition of plane surface of liquid dielectric charged with the electrical charge in the electrostatic field in the periodical gofer surface of crater type deformation is researched. It was proved for the first time that the apparition of dissipative structures keeps not optical character but thermal and is not conditioned by the presence of the photo sensible semiconductor layer. It was established that the development of dissipative structures on the surface of dielectric liquid includes in itself the mechanism of initiation of germination deformations and a mechanism of multiplication of the centers of new deformations in the free volume of germination deformation. |
format |
article |
author |
Constantinov, Boris Pasecinic, Teodosie Untilă, Pantelei |
author_facet |
Constantinov, Boris Pasecinic, Teodosie Untilă, Pantelei |
author_sort |
Constantinov, Boris |
title |
Development of dissipative structures on surface of dielectric liquid in electrostatic field |
title_short |
Development of dissipative structures on surface of dielectric liquid in electrostatic field |
title_full |
Development of dissipative structures on surface of dielectric liquid in electrostatic field |
title_fullStr |
Development of dissipative structures on surface of dielectric liquid in electrostatic field |
title_full_unstemmed |
Development of dissipative structures on surface of dielectric liquid in electrostatic field |
title_sort |
development of dissipative structures on surface of dielectric liquid in electrostatic field |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2005 |
url |
https://doaj.org/article/170d2ed2880f461285bf343dedcced1e |
work_keys_str_mv |
AT constantinovboris developmentofdissipativestructuresonsurfaceofdielectricliquidinelectrostaticfield AT pasecinicteodosie developmentofdissipativestructuresonsurfaceofdielectricliquidinelectrostaticfield AT untilapantelei developmentofdissipativestructuresonsurfaceofdielectricliquidinelectrostaticfield |
_version_ |
1718419109411028992 |