Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials

Abstract The electrical phase transition in van der Waals (vdW) layered materials such as transition-metal dichalcogenides and Bi2Sr2CaCu2O8+x (Bi-2212) high-temperature superconductor has been explored using various techniques, including scanning tunneling and photoemission spectroscopies, and meas...

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Autores principales:	Dong-Hwan Choi, Kyung-Ah Min, Suklyun Hong, Bum-Kyu Kim, Myung-Ho Bae, Ju-Jin Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/172554a8f97a4cceb701be08f8a8a56d
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spelling	oai:doaj.org-article:172554a8f97a4cceb701be08f8a8a56d2021-12-02T19:13:54ZIndium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials10.1038/s41598-021-97110-z2045-2322https://doaj.org/article/172554a8f97a4cceb701be08f8a8a56d2021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-97110-zhttps://doaj.org/toc/2045-2322Abstract The electrical phase transition in van der Waals (vdW) layered materials such as transition-metal dichalcogenides and Bi2Sr2CaCu2O8+x (Bi-2212) high-temperature superconductor has been explored using various techniques, including scanning tunneling and photoemission spectroscopies, and measurements of electrical resistance as a function of temperature. In this study, we develop one useful method to elucidate the electrical phases in vdW layered materials: indium (In)-contacted vdW tunneling spectroscopy for 1T-TaS2, Bi-2212 and 2H-MoS2. We utilized the vdW gap formed at an In/vdW material interface as a tunnel barrier for tunneling spectroscopy. For strongly correlated electron systems such as 1T-TaS2 and Bi-2212, pronounced gap features corresponding to the Mott and superconducting gaps were respectively observed at T = 4 K. We observed a gate dependence of the amplitude of the superconducting gap, which has potential applications in a gate-tunable superconducting device with a SiO2/Si substrate. For In/10 nm-thick 2H-MoS2 devices, differential conductance shoulders at bias voltages of approximately ± 0.45 V were observed, which were attributed to the semiconducting gap. These results show that In-contacted vdW gap tunneling spectroscopy in a fashion of field-effect transistor provides feasible and reliable ways to investigate electronic structures of vdW materials.Dong-Hwan ChoiKyung-Ah MinSuklyun HongBum-Kyu KimMyung-Ho BaeJu-Jin KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Dong-Hwan Choi Kyung-Ah Min Suklyun Hong Bum-Kyu Kim Myung-Ho Bae Ju-Jin Kim Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
description	Abstract The electrical phase transition in van der Waals (vdW) layered materials such as transition-metal dichalcogenides and Bi2Sr2CaCu2O8+x (Bi-2212) high-temperature superconductor has been explored using various techniques, including scanning tunneling and photoemission spectroscopies, and measurements of electrical resistance as a function of temperature. In this study, we develop one useful method to elucidate the electrical phases in vdW layered materials: indium (In)-contacted vdW tunneling spectroscopy for 1T-TaS2, Bi-2212 and 2H-MoS2. We utilized the vdW gap formed at an In/vdW material interface as a tunnel barrier for tunneling spectroscopy. For strongly correlated electron systems such as 1T-TaS2 and Bi-2212, pronounced gap features corresponding to the Mott and superconducting gaps were respectively observed at T = 4 K. We observed a gate dependence of the amplitude of the superconducting gap, which has potential applications in a gate-tunable superconducting device with a SiO2/Si substrate. For In/10 nm-thick 2H-MoS2 devices, differential conductance shoulders at bias voltages of approximately ± 0.45 V were observed, which were attributed to the semiconducting gap. These results show that In-contacted vdW gap tunneling spectroscopy in a fashion of field-effect transistor provides feasible and reliable ways to investigate electronic structures of vdW materials.
format	article
author	Dong-Hwan Choi Kyung-Ah Min Suklyun Hong Bum-Kyu Kim Myung-Ho Bae Ju-Jin Kim
author_facet	Dong-Hwan Choi Kyung-Ah Min Suklyun Hong Bum-Kyu Kim Myung-Ho Bae Ju-Jin Kim
author_sort	Dong-Hwan Choi
title	Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
title_short	Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
title_full	Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
title_fullStr	Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
title_full_unstemmed	Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
title_sort	indium-contacted van der waals gap tunneling spectroscopy for van der waals layered materials
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/172554a8f97a4cceb701be08f8a8a56d
work_keys_str_mv	AT donghwanchoi indiumcontactedvanderwaalsgaptunnelingspectroscopyforvanderwaalslayeredmaterials AT kyungahmin indiumcontactedvanderwaalsgaptunnelingspectroscopyforvanderwaalslayeredmaterials AT suklyunhong indiumcontactedvanderwaalsgaptunnelingspectroscopyforvanderwaalslayeredmaterials AT bumkyukim indiumcontactedvanderwaalsgaptunnelingspectroscopyforvanderwaalslayeredmaterials AT myunghobae indiumcontactedvanderwaalsgaptunnelingspectroscopyforvanderwaalslayeredmaterials AT jujinkim indiumcontactedvanderwaalsgaptunnelingspectroscopyforvanderwaalslayeredmaterials
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Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials

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