Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design

Abstract We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality fo...

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Autores principales:	Jiadai An, Xianying Dai, Lansheng Feng, Jieming Zheng
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/173dc4060c2c4b0ebf442fd9e0b7f7a5
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spelling	oai:doaj.org-article:173dc4060c2c4b0ebf442fd9e0b7f7a52021-12-02T17:32:56ZParameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design10.1038/s41598-021-87554-82045-2322https://doaj.org/article/173dc4060c2c4b0ebf442fd9e0b7f7a52021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87554-8https://doaj.org/toc/2045-2322Abstract We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality for AlN film, while the flow field in the HT-MOCVD reactor is closely related to the process parameters, which will affect the uniformity of the film. An independently developed conceptual HT-MOCVD reactor was established for the AlN growth to carry out the CFD simulation. To evaluate the role of the parameters systematically and efficiently on the growth uniformity, the process parameters based on CFD simulation were analyzed using orthogonal test design. The advantages of the range, matrix and variance methods were considered and the results were analyzed comprehensively and the optimal process parameters were obtained as follows, susceptor rotational speed 400 rpm, operating pressure 40 Torr, gas flow rate 50 slm, substrate temperature 1550 K.Jiadai AnXianying DaiLansheng FengJieming ZhengNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Jiadai An Xianying Dai Lansheng Feng Jieming Zheng Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design
description	Abstract We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality for AlN film, while the flow field in the HT-MOCVD reactor is closely related to the process parameters, which will affect the uniformity of the film. An independently developed conceptual HT-MOCVD reactor was established for the AlN growth to carry out the CFD simulation. To evaluate the role of the parameters systematically and efficiently on the growth uniformity, the process parameters based on CFD simulation were analyzed using orthogonal test design. The advantages of the range, matrix and variance methods were considered and the results were analyzed comprehensively and the optimal process parameters were obtained as follows, susceptor rotational speed 400 rpm, operating pressure 40 Torr, gas flow rate 50 slm, substrate temperature 1550 K.
format	article
author	Jiadai An Xianying Dai Lansheng Feng Jieming Zheng
author_facet	Jiadai An Xianying Dai Lansheng Feng Jieming Zheng
author_sort	Jiadai An
title	Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design
title_short	Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design
title_full	Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design
title_fullStr	Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design
title_full_unstemmed	Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design
title_sort	parameter study of the high temperature mocvd numerical model for aln growth using orthogonal test design
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/173dc4060c2c4b0ebf442fd9e0b7f7a5
work_keys_str_mv	AT jiadaian parameterstudyofthehightemperaturemocvdnumericalmodelforalngrowthusingorthogonaltestdesign AT xianyingdai parameterstudyofthehightemperaturemocvdnumericalmodelforalngrowthusingorthogonaltestdesign AT lanshengfeng parameterstudyofthehightemperaturemocvdnumericalmodelforalngrowthusingorthogonaltestdesign AT jiemingzheng parameterstudyofthehightemperaturemocvdnumericalmodelforalngrowthusingorthogonaltestdesign
_version_	1718380105883975680

Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design

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