Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design

Abstract We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality fo...

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Autores principales: Jiadai An, Xianying Dai, Lansheng Feng, Jieming Zheng
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/173dc4060c2c4b0ebf442fd9e0b7f7a5
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