Thin AIN films growth on Si (III) by hydride vapor phase epitaxy
Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning lectron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/1758b410e67d47d4ad9a77172b5e8685 |
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| Sumario: | Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE)
method in a horizontal quartz reactor. The surface of layers has been studied by scanning
lectron microscopy and by the Raman spectroscopy method and found to have the structured
morphology. It has been determined that the layers have high specific electrical resistance and
are strained in the plane of the substrate. |
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