Thin AIN films growth on Si (III) by hydride vapor phase epitaxy

Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning lectron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined...

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Autores principales:	Gorceac, Leonid, Davîdov, V., Jiliaev, Iu., Botnariuc, Vasile, Raevschi, Simion
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/1758b410e67d47d4ad9a77172b5e8685
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spelling	oai:doaj.org-article:1758b410e67d47d4ad9a77172b5e86852021-11-21T12:06:20ZThin AIN films growth on Si (III) by hydride vapor phase epitaxy 2537-63651810-648Xhttps://doaj.org/article/1758b410e67d47d4ad9a77172b5e86852008-10-01T00:00:00Zhttps://mjps.nanotech.md/archive/2008/article/3957https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning lectron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined that the layers have high specific electrical resistance and are strained in the plane of the substrate. Gorceac, LeonidDavîdov, V.Jiliaev, Iu.Botnariuc, VasileRaevschi, SimionD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 7, Iss 4, Pp 476-480 (2008)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Gorceac, Leonid Davîdov, V. Jiliaev, Iu. Botnariuc, Vasile Raevschi, Simion Thin AIN films growth on Si (III) by hydride vapor phase epitaxy
description	Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning lectron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined that the layers have high specific electrical resistance and are strained in the plane of the substrate.
format	article
author	Gorceac, Leonid Davîdov, V. Jiliaev, Iu. Botnariuc, Vasile Raevschi, Simion
author_facet	Gorceac, Leonid Davîdov, V. Jiliaev, Iu. Botnariuc, Vasile Raevschi, Simion
author_sort	Gorceac, Leonid
title	Thin AIN films growth on Si (III) by hydride vapor phase epitaxy
title_short	Thin AIN films growth on Si (III) by hydride vapor phase epitaxy
title_full	Thin AIN films growth on Si (III) by hydride vapor phase epitaxy
title_fullStr	Thin AIN films growth on Si (III) by hydride vapor phase epitaxy
title_full_unstemmed	Thin AIN films growth on Si (III) by hydride vapor phase epitaxy
title_sort	thin ain films growth on si (iii) by hydride vapor phase epitaxy
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2008
url	https://doaj.org/article/1758b410e67d47d4ad9a77172b5e8685
work_keys_str_mv	AT gorceacleonid thinainfilmsgrowthonsiiiibyhydridevaporphaseepitaxy AT davidovv thinainfilmsgrowthonsiiiibyhydridevaporphaseepitaxy AT jiliaeviu thinainfilmsgrowthonsiiiibyhydridevaporphaseepitaxy AT botnariucvasile thinainfilmsgrowthonsiiiibyhydridevaporphaseepitaxy AT raevschisimion thinainfilmsgrowthonsiiiibyhydridevaporphaseepitaxy
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Thin AIN films growth on Si (III) by hydride vapor phase epitaxy

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