Low-noise GaAs quantum dots for quantum photonics
GaAs quantum dots emitting at the near-red part of the spectrum usually suffers from excess charge-noise. With a careful design of a n-i-p-diode structure hosting GaAs quantum dots, the authors demonstrate ultralow-noise behaviour and high-fidelity spin initialisation close to rubidium wavelengths.
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/17611e1fcc144d7ead1eddecfdc5ceb8 |
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