Wide gap Chern Mott insulating phases achieved by design

Condensed Matter Physics: quantised Hall transport in two dimensional magnetic insulators Simulations predict a Chern insulating state with quantized anomalous Hall transport in insulators without an applied magnetic field. These strongly correlated systems are designed based on transition metal oxi...

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Autores principales:	Hongli Guo, Shruba Gangopadhyay, Okan Köksal, Rossitza Pentcheva, Warren E. Pickett
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
Acceso en línea:	https://doaj.org/article/179eef512b1f45fdb42d346bbb57b2e4
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id	oai:doaj.org-article:179eef512b1f45fdb42d346bbb57b2e4
record_format	dspace
spelling	oai:doaj.org-article:179eef512b1f45fdb42d346bbb57b2e42021-12-02T13:41:46ZWide gap Chern Mott insulating phases achieved by design10.1038/s41535-016-0007-22397-4648https://doaj.org/article/179eef512b1f45fdb42d346bbb57b2e42017-01-01T00:00:00Zhttps://doi.org/10.1038/s41535-016-0007-2https://doaj.org/toc/2397-4648Condensed Matter Physics: quantised Hall transport in two dimensional magnetic insulators Simulations predict a Chern insulating state with quantized anomalous Hall transport in insulators without an applied magnetic field. These strongly correlated systems are designed based on transition metal oxides, unlike existing weakly correlated electron-based examples whose bulk conduction masks surface currents. An international team led by Warren Pickett at the University of California Davis designed the materials based on a buckled honeycomb lattice. By tuning spin, orbital, charge, and lattice degrees of freedom as well as strain, they predict robust ruthenium and osmium bilayers with conducting boundary states, while retaining a bulk bandgap of up to 130 meV. These properties, topologically protected by electronic entanglement, provide promise of applications in next generation electronics and possibly quantum computing. These systems offer more robust platforms than previously suggested and guide experimental synthesis to exploit these emergent phenomena.Hongli GuoShruba GangopadhyayOkan KöksalRossitza PentchevaWarren E. PickettNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Atomic physics. Constitution and properties of matterQC170-197ENnpj Quantum Materials, Vol 2, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 Hongli Guo Shruba Gangopadhyay Okan Köksal Rossitza Pentcheva Warren E. Pickett Wide gap Chern Mott insulating phases achieved by design
description	Condensed Matter Physics: quantised Hall transport in two dimensional magnetic insulators Simulations predict a Chern insulating state with quantized anomalous Hall transport in insulators without an applied magnetic field. These strongly correlated systems are designed based on transition metal oxides, unlike existing weakly correlated electron-based examples whose bulk conduction masks surface currents. An international team led by Warren Pickett at the University of California Davis designed the materials based on a buckled honeycomb lattice. By tuning spin, orbital, charge, and lattice degrees of freedom as well as strain, they predict robust ruthenium and osmium bilayers with conducting boundary states, while retaining a bulk bandgap of up to 130 meV. These properties, topologically protected by electronic entanglement, provide promise of applications in next generation electronics and possibly quantum computing. These systems offer more robust platforms than previously suggested and guide experimental synthesis to exploit these emergent phenomena.
format	article
author	Hongli Guo Shruba Gangopadhyay Okan Köksal Rossitza Pentcheva Warren E. Pickett
author_facet	Hongli Guo Shruba Gangopadhyay Okan Köksal Rossitza Pentcheva Warren E. Pickett
author_sort	Hongli Guo
title	Wide gap Chern Mott insulating phases achieved by design
title_short	Wide gap Chern Mott insulating phases achieved by design
title_full	Wide gap Chern Mott insulating phases achieved by design
title_fullStr	Wide gap Chern Mott insulating phases achieved by design
title_full_unstemmed	Wide gap Chern Mott insulating phases achieved by design
title_sort	wide gap chern mott insulating phases achieved by design
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/179eef512b1f45fdb42d346bbb57b2e4
work_keys_str_mv	AT hongliguo widegapchernmottinsulatingphasesachievedbydesign AT shrubagangopadhyay widegapchernmottinsulatingphasesachievedbydesign AT okankoksal widegapchernmottinsulatingphasesachievedbydesign AT rossitzapentcheva widegapchernmottinsulatingphasesachievedbydesign AT warrenepickett widegapchernmottinsulatingphasesachievedbydesign
_version_	1718392541215195136

Wide gap Chern Mott insulating phases achieved by design

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