In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering

In-plane polarized ferroelectric thin films typically exhibit complicated multidomain states, not desirable for optoelectronic device performance. Here, the authors combine interfacial symmetry engineering and anisotropic strain to design single-domain in-plane polarized ferroelectric BaTiO3 films.

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Autores principales:	J. W. Lee, K. Eom, T. R. Paudel, B. Wang, H. Lu, H. X. Huyan, S. Lindemann, S. Ryu, H. Lee, T. H. Kim, Y. Yuan, J. A. Zorn, S. Lei, W. P. Gao, T. Tybell, V. Gopalan, X. Q. Pan, A. Gruverman, L. Q. Chen, E. Y. Tsymbal, C. B. Eom
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/17eb12170f19442aaaaa33ca770ee35b
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spelling	oai:doaj.org-article:17eb12170f19442aaaaa33ca770ee35b2021-11-28T12:35:26ZIn-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering10.1038/s41467-021-26660-72041-1723https://doaj.org/article/17eb12170f19442aaaaa33ca770ee35b2021-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-26660-7https://doaj.org/toc/2041-1723In-plane polarized ferroelectric thin films typically exhibit complicated multidomain states, not desirable for optoelectronic device performance. Here, the authors combine interfacial symmetry engineering and anisotropic strain to design single-domain in-plane polarized ferroelectric BaTiO3 films.J. W. LeeK. EomT. R. PaudelB. WangH. LuH. X. HuyanS. LindemannS. RyuH. LeeT. H. KimY. YuanJ. A. ZornS. LeiW. P. GaoT. TybellV. GopalanX. Q. PanA. GruvermanL. Q. ChenE. Y. TsymbalC. B. EomNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q J. W. Lee K. Eom T. R. Paudel B. Wang H. Lu H. X. Huyan S. Lindemann S. Ryu H. Lee T. H. Kim Y. Yuan J. A. Zorn S. Lei W. P. Gao T. Tybell V. Gopalan X. Q. Pan A. Gruverman L. Q. Chen E. Y. Tsymbal C. B. Eom In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
description	In-plane polarized ferroelectric thin films typically exhibit complicated multidomain states, not desirable for optoelectronic device performance. Here, the authors combine interfacial symmetry engineering and anisotropic strain to design single-domain in-plane polarized ferroelectric BaTiO3 films.
format	article
author	J. W. Lee K. Eom T. R. Paudel B. Wang H. Lu H. X. Huyan S. Lindemann S. Ryu H. Lee T. H. Kim Y. Yuan J. A. Zorn S. Lei W. P. Gao T. Tybell V. Gopalan X. Q. Pan A. Gruverman L. Q. Chen E. Y. Tsymbal C. B. Eom
author_facet	J. W. Lee K. Eom T. R. Paudel B. Wang H. Lu H. X. Huyan S. Lindemann S. Ryu H. Lee T. H. Kim Y. Yuan J. A. Zorn S. Lei W. P. Gao T. Tybell V. Gopalan X. Q. Pan A. Gruverman L. Q. Chen E. Y. Tsymbal C. B. Eom
author_sort	J. W. Lee
title	In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
title_short	In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
title_full	In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
title_fullStr	In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
title_full_unstemmed	In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
title_sort	in-plane quasi-single-domain batio3 via interfacial symmetry engineering
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/17eb12170f19442aaaaa33ca770ee35b
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In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering

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