Nanomechanical parameters of new carbazolyle-containing photoresist polymers

The photoluminescence and absoption spectral distribution close to the edge of fundamental band were studied in the CdS and CdTe films components of the CdS/CdTe heterojunctions. Recombination level energetic position was determined. The annealing of the CdS/CdTe heterojun...

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Autores principales:	Vatavu, Sergiu, Gaşin, Petru, Caraman, Iuliana
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/18bdbc30d1e449f88fad844573821b11
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spelling	oai:doaj.org-article:18bdbc30d1e449f88fad844573821b112021-11-21T12:11:34ZNanomechanical parameters of new carbazolyle-containing photoresist polymers 2537-63651810-648Xhttps://doaj.org/article/18bdbc30d1e449f88fad844573821b112005-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3373https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The photoluminescence and absoption spectral distribution close to the edge of fundamental band were studied in the CdS and CdTe films components of the CdS/CdTe heterojunctions. Recombination level energetic position was determined. The annealing of the CdS/CdTe heterojunctions in presence of CdCl2 results in formation of new recombination levels, revealed by a luminescent band in the energy range of 1.6-1.7 eV and by the shift of the impurity band maximum to the red wavelength region by 50 meV. Vatavu, SergiuGaşin, PetruCaraman, IulianaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 4, Pp 473-480 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Vatavu, Sergiu Gaşin, Petru Caraman, Iuliana Nanomechanical parameters of new carbazolyle-containing photoresist polymers
description	The photoluminescence and absoption spectral distribution close to the edge of fundamental band were studied in the CdS and CdTe films components of the CdS/CdTe heterojunctions. Recombination level energetic position was determined. The annealing of the CdS/CdTe heterojunctions in presence of CdCl2 results in formation of new recombination levels, revealed by a luminescent band in the energy range of 1.6-1.7 eV and by the shift of the impurity band maximum to the red wavelength region by 50 meV.
format	article
author	Vatavu, Sergiu Gaşin, Petru Caraman, Iuliana
author_facet	Vatavu, Sergiu Gaşin, Petru Caraman, Iuliana
author_sort	Vatavu, Sergiu
title	Nanomechanical parameters of new carbazolyle-containing photoresist polymers
title_short	Nanomechanical parameters of new carbazolyle-containing photoresist polymers
title_full	Nanomechanical parameters of new carbazolyle-containing photoresist polymers
title_fullStr	Nanomechanical parameters of new carbazolyle-containing photoresist polymers
title_full_unstemmed	Nanomechanical parameters of new carbazolyle-containing photoresist polymers
title_sort	nanomechanical parameters of new carbazolyle-containing photoresist polymers
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/18bdbc30d1e449f88fad844573821b11
work_keys_str_mv	AT vatavusergiu nanomechanicalparametersofnewcarbazolylecontainingphotoresistpolymers AT gasinpetru nanomechanicalparametersofnewcarbazolylecontainingphotoresistpolymers AT caramaniuliana nanomechanicalparametersofnewcarbazolylecontainingphotoresistpolymers
_version_	1718419109966774272

Nanomechanical parameters of new carbazolyle-containing photoresist polymers

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