Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures

Cathodoluminescence (CL) as a radiative light produced by an electron beam exciting a luminescent material, has been widely used in imaging and spectroscopic detection of semiconductor, mineral and biological samples with an ultrahigh spatial resolution. Conventional CL spectroscopy shows an excelle...

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Autores principales: Liu Zhixin, Jiang Meiling, Hu Yanglin, Lin Feng, Shen Bo, Zhu Xing, Fang Zheyu
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Lenguaje:EN
Publicado: Institue of Optics and Electronics, Chinese Academy of Sciences 2018
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Acceso en línea:https://doaj.org/article/19fe21ddcb9d49a3a3e0ecdf06c7003a
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spelling oai:doaj.org-article:19fe21ddcb9d49a3a3e0ecdf06c7003a2021-11-11T10:07:47ZScanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures2096-457910.29026/oea.2018.180007https://doaj.org/article/19fe21ddcb9d49a3a3e0ecdf06c7003a2018-02-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2018.180007https://doaj.org/toc/2096-4579Cathodoluminescence (CL) as a radiative light produced by an electron beam exciting a luminescent material, has been widely used in imaging and spectroscopic detection of semiconductor, mineral and biological samples with an ultrahigh spatial resolution. Conventional CL spectroscopy shows an excellent performance in characterization of traditional material luminescence, such as spatial composition variations and fluorescent displays. With the development of nanotechnology, advances of modern microscopy enable CL technique to obtain deep valuable insight of the testing sample, and further extend its applications in the material science, especially for opto-electronic investigations at nanoscale. In this article, we review the study of CL microscopy applied in semiconductor nanostructures for the dislocation, carrier diffusion, band structure, doping level and exciton recombination. Then advantages of CL in revealing and manipulating surface plasmon resonances of metallic nanoantennas are discussed. Finally, the challenge of CL technology is summarized, and potential CL applications for the future opto-electronic study are proposed.Liu ZhixinJiang MeilingHu YanglinLin FengShen BoZhu XingFang ZheyuInstitue of Optics and Electronics, Chinese Academy of Sciencesarticlecathodoluminescencemicroscopysemiconductormetallic nanostructuressurface plasmonsOptics. LightQC350-467ENOpto-Electronic Advances, Vol 1, Iss 4, Pp 180007-1-180007-11 (2018)
institution DOAJ
collection DOAJ
language EN
topic cathodoluminescence
microscopy
semiconductor
metallic nanostructures
surface plasmons
Optics. Light
QC350-467
spellingShingle cathodoluminescence
microscopy
semiconductor
metallic nanostructures
surface plasmons
Optics. Light
QC350-467
Liu Zhixin
Jiang Meiling
Hu Yanglin
Lin Feng
Shen Bo
Zhu Xing
Fang Zheyu
Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures
description Cathodoluminescence (CL) as a radiative light produced by an electron beam exciting a luminescent material, has been widely used in imaging and spectroscopic detection of semiconductor, mineral and biological samples with an ultrahigh spatial resolution. Conventional CL spectroscopy shows an excellent performance in characterization of traditional material luminescence, such as spatial composition variations and fluorescent displays. With the development of nanotechnology, advances of modern microscopy enable CL technique to obtain deep valuable insight of the testing sample, and further extend its applications in the material science, especially for opto-electronic investigations at nanoscale. In this article, we review the study of CL microscopy applied in semiconductor nanostructures for the dislocation, carrier diffusion, band structure, doping level and exciton recombination. Then advantages of CL in revealing and manipulating surface plasmon resonances of metallic nanoantennas are discussed. Finally, the challenge of CL technology is summarized, and potential CL applications for the future opto-electronic study are proposed.
format article
author Liu Zhixin
Jiang Meiling
Hu Yanglin
Lin Feng
Shen Bo
Zhu Xing
Fang Zheyu
author_facet Liu Zhixin
Jiang Meiling
Hu Yanglin
Lin Feng
Shen Bo
Zhu Xing
Fang Zheyu
author_sort Liu Zhixin
title Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures
title_short Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures
title_full Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures
title_fullStr Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures
title_full_unstemmed Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures
title_sort scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures
publisher Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate 2018
url https://doaj.org/article/19fe21ddcb9d49a3a3e0ecdf06c7003a
work_keys_str_mv AT liuzhixin scanningcathodoluminescencemicroscopyapplicationsinsemiconductorandmetallicnanostructures
AT jiangmeiling scanningcathodoluminescencemicroscopyapplicationsinsemiconductorandmetallicnanostructures
AT huyanglin scanningcathodoluminescencemicroscopyapplicationsinsemiconductorandmetallicnanostructures
AT linfeng scanningcathodoluminescencemicroscopyapplicationsinsemiconductorandmetallicnanostructures
AT shenbo scanningcathodoluminescencemicroscopyapplicationsinsemiconductorandmetallicnanostructures
AT zhuxing scanningcathodoluminescencemicroscopyapplicationsinsemiconductorandmetallicnanostructures
AT fangzheyu scanningcathodoluminescencemicroscopyapplicationsinsemiconductorandmetallicnanostructures
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