Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/...

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Autores principales:	Ruinan Wu, Yueguo Hu, Peisen Li, Junping Peng, Jiafei Hu, Ming Yang, Dixiang Chen, Yanrui Guo, Qi Zhang, Xiangnan Xie, Jiayu Dai, Weicheng Qiu, Guang Wang, Mengchun Pan
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	graphene monolayer single-crystal heterostructure epitaxial growth ambient pressure chemical vapor deposition (APCVD) Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/1adcf387c0b64f7bb9770716f285b698
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spelling	oai:doaj.org-article:1adcf387c0b64f7bb9770716f285b6982021-11-25T18:32:34ZControlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition10.3390/nano111131122079-4991https://doaj.org/article/1adcf387c0b64f7bb9770716f285b6982021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3112https://doaj.org/toc/2079-4991The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al<sub>2</sub>O<sub>3</sub> (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.Ruinan WuYueguo HuPeisen LiJunping PengJiafei HuMing YangDixiang ChenYanrui GuoQi ZhangXiangnan XieJiayu DaiWeicheng QiuGuang WangMengchun PanMDPI AGarticlegraphenemonolayersingle-crystalheterostructureepitaxial growthambient pressure chemical vapor deposition (APCVD)ChemistryQD1-999ENNanomaterials, Vol 11, Iss 3112, p 3112 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	graphene monolayer single-crystal heterostructure epitaxial growth ambient pressure chemical vapor deposition (APCVD) Chemistry QD1-999
spellingShingle	graphene monolayer single-crystal heterostructure epitaxial growth ambient pressure chemical vapor deposition (APCVD) Chemistry QD1-999 Ruinan Wu Yueguo Hu Peisen Li Junping Peng Jiafei Hu Ming Yang Dixiang Chen Yanrui Guo Qi Zhang Xiangnan Xie Jiayu Dai Weicheng Qiu Guang Wang Mengchun Pan Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition
description	The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al<sub>2</sub>O<sub>3</sub> (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.
format	article
author	Ruinan Wu Yueguo Hu Peisen Li Junping Peng Jiafei Hu Ming Yang Dixiang Chen Yanrui Guo Qi Zhang Xiangnan Xie Jiayu Dai Weicheng Qiu Guang Wang Mengchun Pan
author_facet	Ruinan Wu Yueguo Hu Peisen Li Junping Peng Jiafei Hu Ming Yang Dixiang Chen Yanrui Guo Qi Zhang Xiangnan Xie Jiayu Dai Weicheng Qiu Guang Wang Mengchun Pan
author_sort	Ruinan Wu
title	Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition
title_short	Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition
title_full	Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition
title_fullStr	Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition
title_full_unstemmed	Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition
title_sort	controlled epitaxial growth and atomically sharp interface of graphene/ferromagnetic heterostructure via ambient pressure chemical vapor deposition
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/1adcf387c0b64f7bb9770716f285b698
work_keys_str_mv	AT ruinanwu controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT yueguohu controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT peisenli controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT junpingpeng controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT jiafeihu controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT mingyang controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT dixiangchen controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT yanruiguo controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT qizhang controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT xiangnanxie controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT jiayudai controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT weichengqiu controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT guangwang controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition AT mengchunpan controlledepitaxialgrowthandatomicallysharpinterfaceofgrapheneferromagneticheterostructureviaambientpressurechemicalvapordeposition
_version_	1718411001426083840

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

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