Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/...

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Autores principales:	Ruinan Wu, Yueguo Hu, Peisen Li, Junping Peng, Jiafei Hu, Ming Yang, Dixiang Chen, Yanrui Guo, Qi Zhang, Xiangnan Xie, Jiayu Dai, Weicheng Qiu, Guang Wang, Mengchun Pan
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	graphene monolayer single-crystal heterostructure epitaxial growth ambient pressure chemical vapor deposition (APCVD) Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/1adcf387c0b64f7bb9770716f285b698
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Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

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