Photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films

Amorphous arsenic trisulfide (As2S3) and arsenic triselenide (As2Se3) are widely investigated amorphous materials due to their interesting electrical, optical, and photoelectrical properties. Mixed amorphous materials, such as (As2S3):(As2Se3), are of special interest for improving the physical prop...

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Autores principales:	Iaseniuc, Oxana, Iovu, Mihail, Cojocaru, Ion, Prisacar, Alexandru
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2014
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/1b2c793b3ceb4dc68f63b3bdce1fcee2
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spelling	oai:doaj.org-article:1b2c793b3ceb4dc68f63b3bdce1fcee22021-11-21T11:59:26ZPhotoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films538.9+621.3822537-63651810-648Xhttps://doaj.org/article/1b2c793b3ceb4dc68f63b3bdce1fcee22014-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2014/article/36721https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Amorphous arsenic trisulfide (As2S3) and arsenic triselenide (As2Se3) are widely investigated amorphous materials due to their interesting electrical, optical, and photoelectrical properties. Mixed amorphous materials, such as (As2S3):(As2Se3), are of special interest for improving the physical properties and recording characteristics and extending the spectral range of photosensibility. Chalcogenide vitreous semiconductors (ChVSs) of the As-S-Se system exhibit photostructural transformations with reversible and irreversible properties and are promising materials as registration media for holography and optical information, for fabrication of diffractive elements, and other optoelectronic applications. Because many optoelectronic devices on amorphous semiconductors are based on the photoconductivity effect, it is of particular interest to study the steady-state and transient characteristics of photoconductivity. In this paper, experimental results for steady-state photoconductivity and holographic characteristics of amorphous (As4S3Se3)1-x:Snx thin films are described. It was shown that the photoconductivity spectra depend on the polarity on the top illuminated electrode and on the Sn concentration in the host glass. The photosensitivity of amorphous (As4S3Se3)1-x:Snx thin films is almost constant for all Sn-containing glasses. The Moss rule was used for determination of optical forbidden gap Eg from the photoconductivity spectra. It was demonstrated that the investigated amorphous films are sensitive to light irradiation and can be used as effective registration media for holographic information. The relaxation of photodarkening in amorphous (As4S3Se3)1-x:Snx thin films was investigated; it was shown that the relaxation curves of transmittance T/T0 = f(t) can be described by stretch exponential function T(t)/T(0) = A0 Aexp[-(t-t0)/τ](1-). The kinetics of diffraction efficiency growth (t) was measured by registration of the laser intensity of the 1st interference maximum versus time exposure. With an increase in the Sn concentration in amorphous (As4S3Se3)1-x:Snx thin films up to 6.0 at % Sn, diffraction efficiency  increases; at higher tin concentrations, it decreases.Iaseniuc, OxanaIovu, MihailCojocaru, IonPrisacar, AlexandruD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 13, Iss 1-2, Pp 50-60 (2014)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Iaseniuc, Oxana Iovu, Mihail Cojocaru, Ion Prisacar, Alexandru Photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films
description	Amorphous arsenic trisulfide (As2S3) and arsenic triselenide (As2Se3) are widely investigated amorphous materials due to their interesting electrical, optical, and photoelectrical properties. Mixed amorphous materials, such as (As2S3):(As2Se3), are of special interest for improving the physical properties and recording characteristics and extending the spectral range of photosensibility. Chalcogenide vitreous semiconductors (ChVSs) of the As-S-Se system exhibit photostructural transformations with reversible and irreversible properties and are promising materials as registration media for holography and optical information, for fabrication of diffractive elements, and other optoelectronic applications. Because many optoelectronic devices on amorphous semiconductors are based on the photoconductivity effect, it is of particular interest to study the steady-state and transient characteristics of photoconductivity. In this paper, experimental results for steady-state photoconductivity and holographic characteristics of amorphous (As4S3Se3)1-x:Snx thin films are described. It was shown that the photoconductivity spectra depend on the polarity on the top illuminated electrode and on the Sn concentration in the host glass. The photosensitivity of amorphous (As4S3Se3)1-x:Snx thin films is almost constant for all Sn-containing glasses. The Moss rule was used for determination of optical forbidden gap Eg from the photoconductivity spectra. It was demonstrated that the investigated amorphous films are sensitive to light irradiation and can be used as effective registration media for holographic information. The relaxation of photodarkening in amorphous (As4S3Se3)1-x:Snx thin films was investigated; it was shown that the relaxation curves of transmittance T/T0 = f(t) can be described by stretch exponential function T(t)/T(0) = A0 Aexp[-(t-t0)/τ](1-). The kinetics of diffraction efficiency growth (t) was measured by registration of the laser intensity of the 1st interference maximum versus time exposure. With an increase in the Sn concentration in amorphous (As4S3Se3)1-x:Snx thin films up to 6.0 at % Sn, diffraction efficiency  increases; at higher tin concentrations, it decreases.
format	article
author	Iaseniuc, Oxana Iovu, Mihail Cojocaru, Ion Prisacar, Alexandru
author_facet	Iaseniuc, Oxana Iovu, Mihail Cojocaru, Ion Prisacar, Alexandru
author_sort	Iaseniuc, Oxana
title	Photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films
title_short	Photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films
title_full	Photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films
title_fullStr	Photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films
title_full_unstemmed	Photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films
title_sort	photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2014
url	https://doaj.org/article/1b2c793b3ceb4dc68f63b3bdce1fcee2
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Photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films

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