Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica

Disorder in semiconductors may lead to quantum interference and positive magnetoconductivity, whose maximum value in 3D is independent of material properties. Here, an apparent violation of this upper bound, in Sn-doped In2O3 films on fused silica, is explained by a model that accounts for additiona...

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Autores principales:	David C. Look, Kevin D. Leedy, Marco D. Santia, Stefan C. Badescu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/1b6f793a9520426cb12019a23dc7852f
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spelling	oai:doaj.org-article:1b6f793a9520426cb12019a23dc7852f2021-12-02T16:36:10ZQuantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica10.1038/s43246-021-00137-y2662-4443https://doaj.org/article/1b6f793a9520426cb12019a23dc7852f2021-03-01T00:00:00Zhttps://doi.org/10.1038/s43246-021-00137-yhttps://doaj.org/toc/2662-4443Disorder in semiconductors may lead to quantum interference and positive magnetoconductivity, whose maximum value in 3D is independent of material properties. Here, an apparent violation of this upper bound, in Sn-doped In2O3 films on fused silica, is explained by a model that accounts for additional disorder close to the interface.David C. LookKevin D. LeedyMarco D. SantiaStefan C. BadescuNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ENCommunications Materials, Vol 2, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 David C. Look Kevin D. Leedy Marco D. Santia Stefan C. Badescu Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica
description	Disorder in semiconductors may lead to quantum interference and positive magnetoconductivity, whose maximum value in 3D is independent of material properties. Here, an apparent violation of this upper bound, in Sn-doped In2O3 films on fused silica, is explained by a model that accounts for additional disorder close to the interface.
format	article
author	David C. Look Kevin D. Leedy Marco D. Santia Stefan C. Badescu
author_facet	David C. Look Kevin D. Leedy Marco D. Santia Stefan C. Badescu
author_sort	David C. Look
title	Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica
title_short	Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica
title_full	Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica
title_fullStr	Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica
title_full_unstemmed	Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica
title_sort	quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/1b6f793a9520426cb12019a23dc7852f
work_keys_str_mv	AT davidclook quantummagnetoconductivitycharacterizationofinterfacedisorderinindiumtinoxidefilmsonfusedsilica AT kevindleedy quantummagnetoconductivitycharacterizationofinterfacedisorderinindiumtinoxidefilmsonfusedsilica AT marcodsantia quantummagnetoconductivitycharacterizationofinterfacedisorderinindiumtinoxidefilmsonfusedsilica AT stefancbadescu quantummagnetoconductivitycharacterizationofinterfacedisorderinindiumtinoxidefilmsonfusedsilica
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Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica

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