Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica

Disorder in semiconductors may lead to quantum interference and positive magnetoconductivity, whose maximum value in 3D is independent of material properties. Here, an apparent violation of this upper bound, in Sn-doped In2O3 films on fused silica, is explained by a model that accounts for additiona...

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Auteurs principaux: David C. Look, Kevin D. Leedy, Marco D. Santia, Stefan C. Badescu
Format: article
Langue:EN
Publié: Nature Portfolio 2021
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Accès en ligne:https://doaj.org/article/1b6f793a9520426cb12019a23dc7852f
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