Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

Abstract We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temper...

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Autores principales:	D. J. J. Loy, P. A. Dananjaya, X. L. Hong, D. P. Shum, W. S. Lew
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Conduction Mechanism Schottky Emission (SE) High Resistance State (HRS) Resistive Random Access Memory (RRAM) RRAM Devices Medicine R Science Q
Acceso en línea:	https://doaj.org/article/1b6f9e51bf60453ea153bdeba152b645
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spelling	oai:doaj.org-article:1b6f9e51bf60453ea153bdeba152b6452021-12-02T15:09:11ZConduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices10.1038/s41598-018-33198-02045-2322https://doaj.org/article/1b6f9e51bf60453ea153bdeba152b6452018-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-33198-0https://doaj.org/toc/2045-2322Abstract We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 102. Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width.D. J. J. LoyP. A. DananjayaX. L. HongD. P. ShumW. S. LewNature PortfolioarticleConduction MechanismSchottky Emission (SE)High Resistance State (HRS)Resistive Random Access Memory (RRAM)RRAM DevicesMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Conduction Mechanism Schottky Emission (SE) High Resistance State (HRS) Resistive Random Access Memory (RRAM) RRAM Devices Medicine R Science Q
spellingShingle	Conduction Mechanism Schottky Emission (SE) High Resistance State (HRS) Resistive Random Access Memory (RRAM) RRAM Devices Medicine R Science Q D. J. J. Loy P. A. Dananjaya X. L. Hong D. P. Shum W. S. Lew Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
description	Abstract We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 102. Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width.
format	article
author	D. J. J. Loy P. A. Dananjaya X. L. Hong D. P. Shum W. S. Lew
author_facet	D. J. J. Loy P. A. Dananjaya X. L. Hong D. P. Shum W. S. Lew
author_sort	D. J. J. Loy
title	Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_short	Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_full	Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_fullStr	Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_full_unstemmed	Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_sort	conduction mechanisms on high retention annealed mgo-based resistive switching memory devices
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/1b6f9e51bf60453ea153bdeba152b645
work_keys_str_mv	AT djjloy conductionmechanismsonhighretentionannealedmgobasedresistiveswitchingmemorydevices AT padananjaya conductionmechanismsonhighretentionannealedmgobasedresistiveswitchingmemorydevices AT xlhong conductionmechanismsonhighretentionannealedmgobasedresistiveswitchingmemorydevices AT dpshum conductionmechanismsonhighretentionannealedmgobasedresistiveswitchingmemorydevices AT wslew conductionmechanismsonhighretentionannealedmgobasedresistiveswitchingmemorydevices
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Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

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