Current Induced Resistive State in Fe(Se,Te) Superconducting Nanostrips

Abstract We study the current-voltage characteristics of Fe(Se,Te) thin films deposited on CaF2 substrates in form of nanostrips (width w ~ λ, λ the London penetration length). In view of a possible application of these materials to superconductive electronics and micro-electronics we focus on trans...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Ciro Nappi, Carlo Camerlingo, Emanuele Enrico, Emilio Bellingeri, Valeria Braccini, Carlo Ferdeghini, Ettore Sarnelli
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/1bd0a43c26904c51b275b98aefa40684
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:1bd0a43c26904c51b275b98aefa40684
record_format	dspace
spelling	oai:doaj.org-article:1bd0a43c26904c51b275b98aefa406842021-12-02T12:32:44ZCurrent Induced Resistive State in Fe(Se,Te) Superconducting Nanostrips10.1038/s41598-017-04425-x2045-2322https://doaj.org/article/1bd0a43c26904c51b275b98aefa406842017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04425-xhttps://doaj.org/toc/2045-2322Abstract We study the current-voltage characteristics of Fe(Se,Te) thin films deposited on CaF2 substrates in form of nanostrips (width w ~ λ, λ the London penetration length). In view of a possible application of these materials to superconductive electronics and micro-electronics we focus on transport properties in small magnetic field, the one generated by the bias current. From the characteristics taken at different temperatures we derive estimates for the pinning potential U and the pinning potential range δ for the magnetic flux lines (vortices). Since the sample lines are very narrow, the classical creep flow model provides a sufficiently accurate interpretation of the data only when the attractive interaction between magnetic flux lines of opposite sign is taken into account. The observed voltages and the induced depression of the critical current of the nanostrips are compatible with the presence of a low number ( $$\lesssim 10$$ < ˜ 10 ) magnetic field lines at the equilibrium, a strongly inhomogeneous current density distribution at the two ends of the strips and a reduced Bean Livingston barrier. In particular, we argue that the sharp corners defining the bridge geometry represent points of easy magnetic flux lines injection. The results are relevant for creep flow analysis in superconducting Fe(Se,Te) nanostrips.Ciro NappiCarlo CamerlingoEmanuele EnricoEmilio BellingeriValeria BracciniCarlo FerdeghiniEttore SarnelliNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Ciro Nappi Carlo Camerlingo Emanuele Enrico Emilio Bellingeri Valeria Braccini Carlo Ferdeghini Ettore Sarnelli Current Induced Resistive State in Fe(Se,Te) Superconducting Nanostrips
description	Abstract We study the current-voltage characteristics of Fe(Se,Te) thin films deposited on CaF2 substrates in form of nanostrips (width w ~ λ, λ the London penetration length). In view of a possible application of these materials to superconductive electronics and micro-electronics we focus on transport properties in small magnetic field, the one generated by the bias current. From the characteristics taken at different temperatures we derive estimates for the pinning potential U and the pinning potential range δ for the magnetic flux lines (vortices). Since the sample lines are very narrow, the classical creep flow model provides a sufficiently accurate interpretation of the data only when the attractive interaction between magnetic flux lines of opposite sign is taken into account. The observed voltages and the induced depression of the critical current of the nanostrips are compatible with the presence of a low number ( $$\lesssim 10$$ < ˜ 10 ) magnetic field lines at the equilibrium, a strongly inhomogeneous current density distribution at the two ends of the strips and a reduced Bean Livingston barrier. In particular, we argue that the sharp corners defining the bridge geometry represent points of easy magnetic flux lines injection. The results are relevant for creep flow analysis in superconducting Fe(Se,Te) nanostrips.
format	article
author	Ciro Nappi Carlo Camerlingo Emanuele Enrico Emilio Bellingeri Valeria Braccini Carlo Ferdeghini Ettore Sarnelli
author_facet	Ciro Nappi Carlo Camerlingo Emanuele Enrico Emilio Bellingeri Valeria Braccini Carlo Ferdeghini Ettore Sarnelli
author_sort	Ciro Nappi
title	Current Induced Resistive State in Fe(Se,Te) Superconducting Nanostrips
title_short	Current Induced Resistive State in Fe(Se,Te) Superconducting Nanostrips
title_full	Current Induced Resistive State in Fe(Se,Te) Superconducting Nanostrips
title_fullStr	Current Induced Resistive State in Fe(Se,Te) Superconducting Nanostrips
title_full_unstemmed	Current Induced Resistive State in Fe(Se,Te) Superconducting Nanostrips
title_sort	current induced resistive state in fe(se,te) superconducting nanostrips
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/1bd0a43c26904c51b275b98aefa40684
work_keys_str_mv	AT cironappi currentinducedresistivestateinfesetesuperconductingnanostrips AT carlocamerlingo currentinducedresistivestateinfesetesuperconductingnanostrips AT emanueleenrico currentinducedresistivestateinfesetesuperconductingnanostrips AT emiliobellingeri currentinducedresistivestateinfesetesuperconductingnanostrips AT valeriabraccini currentinducedresistivestateinfesetesuperconductingnanostrips AT carloferdeghini currentinducedresistivestateinfesetesuperconductingnanostrips AT ettoresarnelli currentinducedresistivestateinfesetesuperconductingnanostrips
_version_	1718393965006290944

Current Induced Resistive State in Fe(Se,Te) Superconducting Nanostrips

Ejemplares similares