Bose, R., & Roy, J. N. (2021). Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance. Wiley.
Style de citation Chicago (17e éd.)Bose, Ria, et Jatindra Nath Roy. Analytical Model and Simulation‐based Analysis of a Work Function Engineered Triple Metal Tunnel Field‐effect Transistor Device Showing Excellent Device Performance. Wiley, 2021.
Style de citation MLA (8e éd.)Bose, Ria, et Jatindra Nath Roy. Analytical Model and Simulation‐based Analysis of a Work Function Engineered Triple Metal Tunnel Field‐effect Transistor Device Showing Excellent Device Performance. Wiley, 2021.
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