Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance

Abstract In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double gate TFET and dual metal TFET device. An...

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Autores principales:	Ria Bose, Jatindra Nath Roy
Formato:	article
Lenguaje:	EN
Publicado:	Wiley 2021
Materias:	Computer engineering. Computer hardware TK7885-7895
Acceso en línea:	https://doaj.org/article/1c50e93b04fe42cdb74801e699649923
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spelling	oai:doaj.org-article:1c50e93b04fe42cdb74801e6996499232021-11-06T03:20:47ZAnalytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance1751-85981751-858X10.1049/cds2.12009https://doaj.org/article/1c50e93b04fe42cdb74801e6996499232021-01-01T00:00:00Zhttps://doi.org/10.1049/cds2.12009https://doaj.org/toc/1751-858Xhttps://doaj.org/toc/1751-8598Abstract In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double gate TFET and dual metal TFET device. An analytical model is formulated to study the performance of the proposed device. A simulation‐based study of these TFET devices has been carried out with the help of 2D TCAD (Technology Computer Aided Design) Sentaurus device simulator for different channel length values in order to validate our proposed mathematical model. The source side n + pocket in the proposed triple metal (TM) TFET device enhances tunnelling probability thus increasing on current and off current is controlled by another n‐pocket near drain side. Significantly lower subthreshold slope (less than 10 mV/decade), high transconductance (in the order of 10−4 S/μm), low energy‐delay product (24.601 fJ‐ns/μm) obtained for TM WFE TFET makes this device more suitable for digital logic and RF (Radio Frequency) application.Ria BoseJatindra Nath RoyWileyarticleComputer engineering. Computer hardwareTK7885-7895ENIET Circuits, Devices and Systems, Vol 15, Iss 1, Pp 11-19 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Computer engineering. Computer hardware TK7885-7895
spellingShingle	Computer engineering. Computer hardware TK7885-7895 Ria Bose Jatindra Nath Roy Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance
description	Abstract In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double gate TFET and dual metal TFET device. An analytical model is formulated to study the performance of the proposed device. A simulation‐based study of these TFET devices has been carried out with the help of 2D TCAD (Technology Computer Aided Design) Sentaurus device simulator for different channel length values in order to validate our proposed mathematical model. The source side n + pocket in the proposed triple metal (TM) TFET device enhances tunnelling probability thus increasing on current and off current is controlled by another n‐pocket near drain side. Significantly lower subthreshold slope (less than 10 mV/decade), high transconductance (in the order of 10−4 S/μm), low energy‐delay product (24.601 fJ‐ns/μm) obtained for TM WFE TFET makes this device more suitable for digital logic and RF (Radio Frequency) application.
format	article
author	Ria Bose Jatindra Nath Roy
author_facet	Ria Bose Jatindra Nath Roy
author_sort	Ria Bose
title	Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance
title_short	Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance
title_full	Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance
title_fullStr	Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance
title_full_unstemmed	Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance
title_sort	analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance
publisher	Wiley
publishDate	2021
url	https://doaj.org/article/1c50e93b04fe42cdb74801e699649923
work_keys_str_mv	AT riabose analyticalmodelandsimulationbasedanalysisofaworkfunctionengineeredtriplemetaltunnelfieldeffecttransistordeviceshowingexcellentdeviceperformance AT jatindranathroy analyticalmodelandsimulationbasedanalysisofaworkfunctionengineeredtriplemetaltunnelfieldeffecttransistordeviceshowingexcellentdeviceperformance
_version_	1718443902752522240

Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance

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