Dissociation of two-dimensional excitons in monolayer WSe2

In two-dimensional semiconductors excitons are strongly bound, suppressing the creation of free carriers. Here, the authors investigate the main exciton dissociation pathway in p-n junctions of monolayer WSe2 by means of time and spectrally resolved photocurrent measurements.

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Detalles Bibliográficos
Autores principales: Mathieu Massicotte, Fabien Vialla, Peter Schmidt, Mark B. Lundeberg, Simone Latini, Sten Haastrup, Mark Danovich, Diana Davydovskaya, Kenji Watanabe, Takashi Taniguchi, Vladimir I. Fal’ko, Kristian S. Thygesen, Thomas G. Pedersen, Frank H. L. Koppens
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/1c606d7fa7a14f2ea06a31a076ab29b0
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Sumario:In two-dimensional semiconductors excitons are strongly bound, suppressing the creation of free carriers. Here, the authors investigate the main exciton dissociation pathway in p-n junctions of monolayer WSe2 by means of time and spectrally resolved photocurrent measurements.