Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn
Resistivity measurements of Mn-doped p-type β-FeSi2 single crystals are presented and analyzed with the different hopping conductivity models. Both the Mott and the Shklovskii- Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the universal scaling behavior of...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2009
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oai:doaj.org-article:1c938407380949638b9953a02c5186ec2021-11-21T12:05:48ZHopping conductivity and spectrum of localized carriers in β-FeSi:Mn2537-63651810-648Xhttps://doaj.org/article/1c938407380949638b9953a02c5186ec2009-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4017https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Resistivity measurements of Mn-doped p-type β-FeSi2 single crystals are presented and analyzed with the different hopping conductivity models. Both the Mott and the Shklovskii- Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the universal scaling behavior of the resistivity. The characteristic and transition temperatures and widths of the impurity band and of the Coulomb gap, Δ, in the density of states (DOS) are obtained, indicating existence of a rigid gap, δ, in the spectrum of DOS, in addition to Δ, which points out to the polaronic nature of the charge carriers in the investigated compound. Aruşanov, ErnestLisunov, ConstantinVinzellberg, HBehr, GSchumann, JSchmidt, OliverD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 1, Pp 49-53 (2009) |
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Physics QC1-999 Electronics TK7800-8360 |
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Physics QC1-999 Electronics TK7800-8360 Aruşanov, Ernest Lisunov, Constantin Vinzellberg, H Behr, G Schumann, J Schmidt, Oliver Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn |
description |
Resistivity measurements of Mn-doped p-type β-FeSi2 single crystals are presented and
analyzed with the different hopping conductivity models. Both the Mott and the Shklovskii-
Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the
universal scaling behavior of the resistivity. The characteristic and transition temperatures and
widths of the impurity band and of the Coulomb gap, Δ, in the density of states (DOS) are
obtained, indicating existence of a rigid gap, δ, in the spectrum of DOS, in addition to Δ,
which points out to the polaronic nature of the charge carriers in the investigated compound.
|
format |
article |
author |
Aruşanov, Ernest Lisunov, Constantin Vinzellberg, H Behr, G Schumann, J Schmidt, Oliver |
author_facet |
Aruşanov, Ernest Lisunov, Constantin Vinzellberg, H Behr, G Schumann, J Schmidt, Oliver |
author_sort |
Aruşanov, Ernest |
title |
Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn |
title_short |
Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn |
title_full |
Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn |
title_fullStr |
Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn |
title_full_unstemmed |
Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn |
title_sort |
hopping conductivity and spectrum of localized carriers in β-fesi:mn |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2009 |
url |
https://doaj.org/article/1c938407380949638b9953a02c5186ec |
work_keys_str_mv |
AT arusanovernest hoppingconductivityandspectrumoflocalizedcarriersinbfesimn AT lisunovconstantin hoppingconductivityandspectrumoflocalizedcarriersinbfesimn AT vinzellbergh hoppingconductivityandspectrumoflocalizedcarriersinbfesimn AT behrg hoppingconductivityandspectrumoflocalizedcarriersinbfesimn AT schumannj hoppingconductivityandspectrumoflocalizedcarriersinbfesimn AT schmidtoliver hoppingconductivityandspectrumoflocalizedcarriersinbfesimn |
_version_ |
1718419230699814912 |