Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn

Resistivity measurements of Mn-doped p-type β-FeSi2 single crystals are presented and analyzed with the different hopping conductivity models. Both the Mott and the Shklovskii- Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the universal scaling behavior of...

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Autores principales: Aruşanov, Ernest, Lisunov, Constantin, Vinzellberg, H, Behr, G, Schumann, J, Schmidt, Oliver
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
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spelling oai:doaj.org-article:1c938407380949638b9953a02c5186ec2021-11-21T12:05:48ZHopping conductivity and spectrum of localized carriers in β-FeSi:Mn2537-63651810-648Xhttps://doaj.org/article/1c938407380949638b9953a02c5186ec2009-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4017https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Resistivity measurements of Mn-doped p-type β-FeSi2 single crystals are presented and analyzed with the different hopping conductivity models. Both the Mott and the Shklovskii- Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the universal scaling behavior of the resistivity. The characteristic and transition temperatures and widths of the impurity band and of the Coulomb gap, Δ, in the density of states (DOS) are obtained, indicating existence of a rigid gap, δ, in the spectrum of DOS, in addition to Δ, which points out to the polaronic nature of the charge carriers in the investigated compound. Aruşanov, ErnestLisunov, ConstantinVinzellberg, HBehr, GSchumann, JSchmidt, OliverD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 1, Pp 49-53 (2009)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Aruşanov, Ernest
Lisunov, Constantin
Vinzellberg, H
Behr, G
Schumann, J
Schmidt, Oliver
Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn
description Resistivity measurements of Mn-doped p-type β-FeSi2 single crystals are presented and analyzed with the different hopping conductivity models. Both the Mott and the Shklovskii- Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the universal scaling behavior of the resistivity. The characteristic and transition temperatures and widths of the impurity band and of the Coulomb gap, Δ, in the density of states (DOS) are obtained, indicating existence of a rigid gap, δ, in the spectrum of DOS, in addition to Δ, which points out to the polaronic nature of the charge carriers in the investigated compound.
format article
author Aruşanov, Ernest
Lisunov, Constantin
Vinzellberg, H
Behr, G
Schumann, J
Schmidt, Oliver
author_facet Aruşanov, Ernest
Lisunov, Constantin
Vinzellberg, H
Behr, G
Schumann, J
Schmidt, Oliver
author_sort Aruşanov, Ernest
title Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn
title_short Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn
title_full Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn
title_fullStr Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn
title_full_unstemmed Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn
title_sort hopping conductivity and spectrum of localized carriers in β-fesi:mn
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2009
url https://doaj.org/article/1c938407380949638b9953a02c5186ec
work_keys_str_mv AT arusanovernest hoppingconductivityandspectrumoflocalizedcarriersinbfesimn
AT lisunovconstantin hoppingconductivityandspectrumoflocalizedcarriersinbfesimn
AT vinzellbergh hoppingconductivityandspectrumoflocalizedcarriersinbfesimn
AT behrg hoppingconductivityandspectrumoflocalizedcarriersinbfesimn
AT schumannj hoppingconductivityandspectrumoflocalizedcarriersinbfesimn
AT schmidtoliver hoppingconductivityandspectrumoflocalizedcarriersinbfesimn
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