Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy

Abstract We directly measure the electric dipole of InN quantum dots (QDs) grown on In-rich InGaN layers by Kelvin probe force microscopy. This significantly advances the understanding of the superior catalytic performance of InN/InGaN QDs in ion- and biosensing and in photoelectrochemical hydrogen...

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Autores principales:	Yinping Qian, Peng Wang, Lujia Rao, Changkun Song, Hongjie Yin, Xingyu Wang, Guofu Zhou, Richard Nötzel
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/1ca6d75c64d648d6b8677f2fd856d178
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spelling	oai:doaj.org-article:1ca6d75c64d648d6b8677f2fd856d1782021-12-02T18:17:42ZElectric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy10.1038/s41598-020-62820-32045-2322https://doaj.org/article/1ca6d75c64d648d6b8677f2fd856d1782020-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-62820-3https://doaj.org/toc/2045-2322Abstract We directly measure the electric dipole of InN quantum dots (QDs) grown on In-rich InGaN layers by Kelvin probe force microscopy. This significantly advances the understanding of the superior catalytic performance of InN/InGaN QDs in ion- and biosensing and in photoelectrochemical hydrogen generation by water splitting and the understanding of the important third-generation InGaN semiconductor surface in general. The positive surface photovoltage (SPV) gives an outward QD dipole with dipole potential of the order of 150 mV, in agreement with previous calculations. After HCl-etching, to complement the determination of the electric dipole, a giant negative SPV of −2.4 V, significantly larger than the InGaN bandgap energy, is discovered. This giant SPV is assigned to a large inward electric dipole, associated with the appearance of holes, matching the original QD lateral size and density. Such surprising result points towards unique photovoltaic effects and photosensitivity.Yinping QianPeng WangLujia RaoChangkun SongHongjie YinXingyu WangGuofu ZhouRichard NötzelNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Yinping Qian Peng Wang Lujia Rao Changkun Song Hongjie Yin Xingyu Wang Guofu Zhou Richard Nötzel Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy
description	Abstract We directly measure the electric dipole of InN quantum dots (QDs) grown on In-rich InGaN layers by Kelvin probe force microscopy. This significantly advances the understanding of the superior catalytic performance of InN/InGaN QDs in ion- and biosensing and in photoelectrochemical hydrogen generation by water splitting and the understanding of the important third-generation InGaN semiconductor surface in general. The positive surface photovoltage (SPV) gives an outward QD dipole with dipole potential of the order of 150 mV, in agreement with previous calculations. After HCl-etching, to complement the determination of the electric dipole, a giant negative SPV of −2.4 V, significantly larger than the InGaN bandgap energy, is discovered. This giant SPV is assigned to a large inward electric dipole, associated with the appearance of holes, matching the original QD lateral size and density. Such surprising result points towards unique photovoltaic effects and photosensitivity.
format	article
author	Yinping Qian Peng Wang Lujia Rao Changkun Song Hongjie Yin Xingyu Wang Guofu Zhou Richard Nötzel
author_facet	Yinping Qian Peng Wang Lujia Rao Changkun Song Hongjie Yin Xingyu Wang Guofu Zhou Richard Nötzel
author_sort	Yinping Qian
title	Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy
title_short	Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy
title_full	Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy
title_fullStr	Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy
title_full_unstemmed	Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy
title_sort	electric dipole of inn/ingan quantum dots and holes and giant surface photovoltage directly measured by kelvin probe force microscopy
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/1ca6d75c64d648d6b8677f2fd856d178
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_version_	1718378261087518720

Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy

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