Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
In this paper, novel boosting scheme using asymmetric pass voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula>) is proposed to obtain high channel boosting potential and to reduce program disturbance in 3-D N...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/1cbf20fdf1714e2684c1801d4c0dbd6f |
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| Sumario: | In this paper, novel boosting scheme using asymmetric pass voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula>) is proposed to obtain high channel boosting potential and to reduce program disturbance in 3-D NAND flash memory. The proposed scheme has the same program bias and timing conditions as conventional self-boosting except for <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula> voltages applied to both adjacent word-lines of selected word-line (WL<sub>sel</sub>). Reduced <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}} =\,\,\text{V}_{\mathrm{ pass}} - {\Delta }\text{V}$ </tex-math></inline-formula>) is applied to previous word-line (WL<inline-formula> <tex-math notation="LaTeX">$_{\rm n-{1}}$ </tex-math></inline-formula>) of WL<sub>sel</sub> and increased <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass2}} =\,\,\text{V}_{\mathrm{ pass}}+{\Delta }\text{V}$ </tex-math></inline-formula>) is applied to next word-line (WL<inline-formula> <tex-math notation="LaTeX">$_{\rm n+{1}}$ </tex-math></inline-formula>). In this scheme, the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}}$ </tex-math></inline-formula> cuts the channel off and causes local boosting when the channel potentials of inhibit strings are boosted up. Meanwhile, the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass2}}$ </tex-math></inline-formula> compensates the program speed reduction of selected cell (cell<sub>sel</sub>) induced by the decreased voltage of the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}}$ </tex-math></inline-formula>. Through the measurements of program disturbance in fabricated devices, it is revealed that the program disturbance is significantly improved without the reduction of program speed by the proposed scheme. Furthermore, the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass2}}$ </tex-math></inline-formula> are optimized to maximize the improvement. |
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