Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory

In this paper, novel boosting scheme using asymmetric pass voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula>) is proposed to obtain high channel boosting potential and to reduce program disturbance in 3-D N...

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Autores principales:	Dae Woong Kwon, Junil Lee, Sihyun Kim, Ryoongbin Lee, Sangwan Kim, Jong-Ho Lee, Byung-Gook Park
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2018
Materias:	3-D NAND flash memory asymmetric pass voltage local-boosting scheme program disturbance Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/1cbf20fdf1714e2684c1801d4c0dbd6f
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spelling	oai:doaj.org-article:1cbf20fdf1714e2684c1801d4c0dbd6f2021-11-19T00:00:37ZNovel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory2168-673410.1109/JEDS.2018.2801219https://doaj.org/article/1cbf20fdf1714e2684c1801d4c0dbd6f2018-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8279400/https://doaj.org/toc/2168-6734In this paper, novel boosting scheme using asymmetric pass voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula>) is proposed to obtain high channel boosting potential and to reduce program disturbance in 3-D NAND flash memory. The proposed scheme has the same program bias and timing conditions as conventional self-boosting except for <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula> voltages applied to both adjacent word-lines of selected word-line (WL<sub>sel</sub>). Reduced <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}} =\,\,\text{V}_{\mathrm{ pass}} - {\Delta }\text{V}$ </tex-math></inline-formula>) is applied to previous word-line (WL<inline-formula> <tex-math notation="LaTeX">$_{\rm n-{1}}$ </tex-math></inline-formula>) of WL<sub>sel</sub> and increased <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass2}} =\,\,\text{V}_{\mathrm{ pass}}+{\Delta }\text{V}$ </tex-math></inline-formula>) is applied to next word-line (WL<inline-formula> <tex-math notation="LaTeX">$_{\rm n+{1}}$ </tex-math></inline-formula>). In this scheme, the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}}$ </tex-math></inline-formula> cuts the channel off and causes local boosting when the channel potentials of inhibit strings are boosted up. Meanwhile, the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass2}}$ </tex-math></inline-formula> compensates the program speed reduction of selected cell (cell<sub>sel</sub>) induced by the decreased voltage of the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}}$ </tex-math></inline-formula>. Through the measurements of program disturbance in fabricated devices, it is revealed that the program disturbance is significantly improved without the reduction of program speed by the proposed scheme. Furthermore, the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass2}}$ </tex-math></inline-formula> are optimized to maximize the improvement.Dae Woong KwonJunil LeeSihyun KimRyoongbin LeeSangwan KimJong-Ho LeeByung-Gook ParkIEEEarticle3-D NAND flash memoryasymmetric pass voltagelocal-boosting schemeprogram disturbanceElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 6, Pp 286-290 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	3-D NAND flash memory asymmetric pass voltage local-boosting scheme program disturbance Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	3-D NAND flash memory asymmetric pass voltage local-boosting scheme program disturbance Electrical engineering. Electronics. Nuclear engineering TK1-9971 Dae Woong Kwon Junil Lee Sihyun Kim Ryoongbin Lee Sangwan Kim Jong-Ho Lee Byung-Gook Park Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
description	In this paper, novel boosting scheme using asymmetric pass voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula>) is proposed to obtain high channel boosting potential and to reduce program disturbance in 3-D NAND flash memory. The proposed scheme has the same program bias and timing conditions as conventional self-boosting except for <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula> voltages applied to both adjacent word-lines of selected word-line (WL<sub>sel</sub>). Reduced <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}} =\,\,\text{V}_{\mathrm{ pass}} - {\Delta }\text{V}$ </tex-math></inline-formula>) is applied to previous word-line (WL<inline-formula> <tex-math notation="LaTeX">$_{\rm n-{1}}$ </tex-math></inline-formula>) of WL<sub>sel</sub> and increased <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass2}} =\,\,\text{V}_{\mathrm{ pass}}+{\Delta }\text{V}$ </tex-math></inline-formula>) is applied to next word-line (WL<inline-formula> <tex-math notation="LaTeX">$_{\rm n+{1}}$ </tex-math></inline-formula>). In this scheme, the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}}$ </tex-math></inline-formula> cuts the channel off and causes local boosting when the channel potentials of inhibit strings are boosted up. Meanwhile, the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass2}}$ </tex-math></inline-formula> compensates the program speed reduction of selected cell (cell<sub>sel</sub>) induced by the decreased voltage of the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}}$ </tex-math></inline-formula>. Through the measurements of program disturbance in fabricated devices, it is revealed that the program disturbance is significantly improved without the reduction of program speed by the proposed scheme. Furthermore, the <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass1}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass2}}$ </tex-math></inline-formula> are optimized to maximize the improvement.
format	article
author	Dae Woong Kwon Junil Lee Sihyun Kim Ryoongbin Lee Sangwan Kim Jong-Ho Lee Byung-Gook Park
author_facet	Dae Woong Kwon Junil Lee Sihyun Kim Ryoongbin Lee Sangwan Kim Jong-Ho Lee Byung-Gook Park
author_sort	Dae Woong Kwon
title	Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
title_short	Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
title_full	Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
title_fullStr	Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
title_full_unstemmed	Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
title_sort	novel boosting scheme using asymmetric pass voltage for reducing program disturbance in 3-dimensional nand flash memory
publisher	IEEE
publishDate	2018
url	https://doaj.org/article/1cbf20fdf1714e2684c1801d4c0dbd6f
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Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory

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