Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
In this paper, novel boosting scheme using asymmetric pass voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ pass}}$ </tex-math></inline-formula>) is proposed to obtain high channel boosting potential and to reduce program disturbance in 3-D N...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/1cbf20fdf1714e2684c1801d4c0dbd6f |
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