Bright room temperature single photon source at telecom range in cubic silicon carbide

Room-temperature solid-state single photon emitters in the telecom range are suitable for quantum communication. Here, the authors observe defects in high-purity 3C-SiC epitaxy layers grown on a silicon substrate, with good characteristics in terms of brightness, emission’s polarization and photosta...

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Autores principales:	Junfeng Wang, Yu Zhou, Ziyu Wang, Abdullah Rasmita, Jianqun Yang, Xingji Li, Hans Jürgen von Bardeleben, Weibo Gao
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/1cfc7e198e0f475ca9436ce74b2c5742
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spelling	oai:doaj.org-article:1cfc7e198e0f475ca9436ce74b2c57422021-12-02T15:34:39ZBright room temperature single photon source at telecom range in cubic silicon carbide10.1038/s41467-018-06605-32041-1723https://doaj.org/article/1cfc7e198e0f475ca9436ce74b2c57422018-10-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-06605-3https://doaj.org/toc/2041-1723Room-temperature solid-state single photon emitters in the telecom range are suitable for quantum communication. Here, the authors observe defects in high-purity 3C-SiC epitaxy layers grown on a silicon substrate, with good characteristics in terms of brightness, emission’s polarization and photostability.Junfeng WangYu ZhouZiyu WangAbdullah RasmitaJianqun YangXingji LiHans Jürgen von BardelebenWeibo GaoNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-6 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Junfeng Wang Yu Zhou Ziyu Wang Abdullah Rasmita Jianqun Yang Xingji Li Hans Jürgen von Bardeleben Weibo Gao Bright room temperature single photon source at telecom range in cubic silicon carbide
description	Room-temperature solid-state single photon emitters in the telecom range are suitable for quantum communication. Here, the authors observe defects in high-purity 3C-SiC epitaxy layers grown on a silicon substrate, with good characteristics in terms of brightness, emission’s polarization and photostability.
format	article
author	Junfeng Wang Yu Zhou Ziyu Wang Abdullah Rasmita Jianqun Yang Xingji Li Hans Jürgen von Bardeleben Weibo Gao
author_facet	Junfeng Wang Yu Zhou Ziyu Wang Abdullah Rasmita Jianqun Yang Xingji Li Hans Jürgen von Bardeleben Weibo Gao
author_sort	Junfeng Wang
title	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_short	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_full	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_fullStr	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_full_unstemmed	Bright room temperature single photon source at telecom range in cubic silicon carbide
title_sort	bright room temperature single photon source at telecom range in cubic silicon carbide
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/1cfc7e198e0f475ca9436ce74b2c5742
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Bright room temperature single photon source at telecom range in cubic silicon carbide

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