Hydrogen-Free Carbon Films Deposited by a High Density Plasma Assisted Sputtering Source
Hydrogen-free carbon films were synthesized by a high density plasma assisted sputtering source (HiPASS). In the HiPASS a high density (> 1012 cm-3) remote Ar plasma was used to sputter a graphite cathode. As a direct current sputtering voltage was changed from -400 to -800 V the deposition r...
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Japanese Society of Tribologists
2012
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oai:doaj.org-article:1d85c4d684a140c981ae6099ef32e6852021-11-05T09:24:58ZHydrogen-Free Carbon Films Deposited by a High Density Plasma Assisted Sputtering Source1881-219810.2474/trol.7.201https://doaj.org/article/1d85c4d684a140c981ae6099ef32e6852012-09-01T00:00:00Zhttps://www.jstage.jst.go.jp/article/trol/7/3/7_201/_pdf/-char/enhttps://doaj.org/toc/1881-2198Hydrogen-free carbon films were synthesized by a high density plasma assisted sputtering source (HiPASS). In the HiPASS a high density (> 1012 cm-3) remote Ar plasma was used to sputter a graphite cathode. As a direct current sputtering voltage was changed from -400 to -800 V the deposition rate was linearly increased from 3.5 to 8 nm/min. Raman spectroscopy showed that the ratio of D- and G-peaks (I(D)/I(G)) was increased 0.89 to 1.68 and the position of G-peak was shifted from 1573.8 to 1575.1 cm-1 as the sputtering voltage is negatively increased. This corresponds to the phase transition from amorphous carbon to nano-crystalline graphite with the decrease of sp3 fraction, which causes the decreases of nano hardness from 23 to 22 GPa. In an asymmetric pulsed sputtering with fixed voltage (Vp-p = -600 V), the ratio of I(D)/I(G) was increased 1.10 to 1.41 as a positive duty is increased from 0 to 14%. The electron heating of graphite target during a positive duty increased the target temperature, resulting in the formation of sp2 dominant carbon film and the decreases of nano hardness from 22 to 21 GPa.Seunghun LeeDo-Geun KimJong-Kuk KimJapanese Society of Tribologistsarticlesputteringhydrogen-free carbon filmdiamond-like carbonPhysicsQC1-999Engineering (General). Civil engineering (General)TA1-2040Mechanical engineering and machineryTJ1-1570ChemistryQD1-999ENTribology Online, Vol 7, Iss 3, Pp 201-206 (2012) |
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DOAJ |
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DOAJ |
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EN |
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sputtering hydrogen-free carbon film diamond-like carbon Physics QC1-999 Engineering (General). Civil engineering (General) TA1-2040 Mechanical engineering and machinery TJ1-1570 Chemistry QD1-999 |
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sputtering hydrogen-free carbon film diamond-like carbon Physics QC1-999 Engineering (General). Civil engineering (General) TA1-2040 Mechanical engineering and machinery TJ1-1570 Chemistry QD1-999 Seunghun Lee Do-Geun Kim Jong-Kuk Kim Hydrogen-Free Carbon Films Deposited by a High Density Plasma Assisted Sputtering Source |
| description |
Hydrogen-free carbon films were synthesized by a high density plasma assisted sputtering source (HiPASS). In the HiPASS a high density (> 1012 cm-3) remote Ar plasma was used to sputter a graphite cathode. As a direct current sputtering voltage was changed from -400 to -800 V the deposition rate was linearly increased from 3.5 to 8 nm/min. Raman spectroscopy showed that the ratio of D- and G-peaks (I(D)/I(G)) was increased 0.89 to 1.68 and the position of G-peak was shifted from 1573.8 to 1575.1 cm-1 as the sputtering voltage is negatively increased. This corresponds to the phase transition from amorphous carbon to nano-crystalline graphite with the decrease of sp3 fraction, which causes the decreases of nano hardness from 23 to 22 GPa. In an asymmetric pulsed sputtering with fixed voltage (Vp-p = -600 V), the ratio of I(D)/I(G) was increased 1.10 to 1.41 as a positive duty is increased from 0 to 14%. The electron heating of graphite target during a positive duty increased the target temperature, resulting in the formation of sp2 dominant carbon film and the decreases of nano hardness from 22 to 21 GPa. |
| format |
article |
| author |
Seunghun Lee Do-Geun Kim Jong-Kuk Kim |
| author_facet |
Seunghun Lee Do-Geun Kim Jong-Kuk Kim |
| author_sort |
Seunghun Lee |
| title |
Hydrogen-Free Carbon Films Deposited by a High Density Plasma Assisted Sputtering Source |
| title_short |
Hydrogen-Free Carbon Films Deposited by a High Density Plasma Assisted Sputtering Source |
| title_full |
Hydrogen-Free Carbon Films Deposited by a High Density Plasma Assisted Sputtering Source |
| title_fullStr |
Hydrogen-Free Carbon Films Deposited by a High Density Plasma Assisted Sputtering Source |
| title_full_unstemmed |
Hydrogen-Free Carbon Films Deposited by a High Density Plasma Assisted Sputtering Source |
| title_sort |
hydrogen-free carbon films deposited by a high density plasma assisted sputtering source |
| publisher |
Japanese Society of Tribologists |
| publishDate |
2012 |
| url |
https://doaj.org/article/1d85c4d684a140c981ae6099ef32e685 |
| work_keys_str_mv |
AT seunghunlee hydrogenfreecarbonfilmsdepositedbyahighdensityplasmaassistedsputteringsource AT dogeunkim hydrogenfreecarbonfilmsdepositedbyahighdensityplasmaassistedsputteringsource AT jongkukkim hydrogenfreecarbonfilmsdepositedbyahighdensityplasmaassistedsputteringsource |
| _version_ |
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