High electron mobility in strained GaAs nanowires

Semiconductor nanowires are promising candidates for the realization of novel transistor concepts. Here, the authors demonstrate that electron mobility in strained coaxial nanowire heterostructures can be higher than in the corresponding bulk crystals.

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Autores principales:	Leila Balaghi, Si Shan, Ivan Fotev, Finn Moebus, Rakesh Rana, Tommaso Venanzi, René Hübner, Thomas Mikolajick, Harald Schneider, Manfred Helm, Alexej Pashkin, Emmanouil Dimakis
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/1d998c9f7f4d4674a7c396d2642f09c7
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spelling	oai:doaj.org-article:1d998c9f7f4d4674a7c396d2642f09c72021-11-21T12:35:53ZHigh electron mobility in strained GaAs nanowires10.1038/s41467-021-27006-z2041-1723https://doaj.org/article/1d998c9f7f4d4674a7c396d2642f09c72021-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-27006-zhttps://doaj.org/toc/2041-1723Semiconductor nanowires are promising candidates for the realization of novel transistor concepts. Here, the authors demonstrate that electron mobility in strained coaxial nanowire heterostructures can be higher than in the corresponding bulk crystals.Leila BalaghiSi ShanIvan FotevFinn MoebusRakesh RanaTommaso VenanziRené HübnerThomas MikolajickHarald SchneiderManfred HelmAlexej PashkinEmmanouil DimakisNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-11 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Leila Balaghi Si Shan Ivan Fotev Finn Moebus Rakesh Rana Tommaso Venanzi René Hübner Thomas Mikolajick Harald Schneider Manfred Helm Alexej Pashkin Emmanouil Dimakis High electron mobility in strained GaAs nanowires
description	Semiconductor nanowires are promising candidates for the realization of novel transistor concepts. Here, the authors demonstrate that electron mobility in strained coaxial nanowire heterostructures can be higher than in the corresponding bulk crystals.
format	article
author	Leila Balaghi Si Shan Ivan Fotev Finn Moebus Rakesh Rana Tommaso Venanzi René Hübner Thomas Mikolajick Harald Schneider Manfred Helm Alexej Pashkin Emmanouil Dimakis
author_facet	Leila Balaghi Si Shan Ivan Fotev Finn Moebus Rakesh Rana Tommaso Venanzi René Hübner Thomas Mikolajick Harald Schneider Manfred Helm Alexej Pashkin Emmanouil Dimakis
author_sort	Leila Balaghi
title	High electron mobility in strained GaAs nanowires
title_short	High electron mobility in strained GaAs nanowires
title_full	High electron mobility in strained GaAs nanowires
title_fullStr	High electron mobility in strained GaAs nanowires
title_full_unstemmed	High electron mobility in strained GaAs nanowires
title_sort	high electron mobility in strained gaas nanowires
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/1d998c9f7f4d4674a7c396d2642f09c7
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High electron mobility in strained GaAs nanowires

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