High electron mobility in strained GaAs nanowires

High electron mobility in strained GaAs nanowires

Semiconductor nanowires are promising candidates for the realization of novel transistor concepts. Here, the authors demonstrate that electron mobility in strained coaxial nanowire heterostructures can be higher than in the corresponding bulk crystals.

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Autores principales: Leila Balaghi, Si Shan, Ivan Fotev, Finn Moebus, Rakesh Rana, Tommaso Venanzi, René Hübner, Thomas Mikolajick, Harald Schneider, Manfred Helm, Alexej Pashkin, Emmanouil Dimakis
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Science
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Acceso en línea:https://doaj.org/article/1d998c9f7f4d4674a7c396d2642f09c7
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https://doaj.org/article/1d998c9f7f4d4674a7c396d2642f09c7

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