Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after regrowth. According to X-ray diffraction...
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2020
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oai:doaj.org-article:1db380d030cd45cd831b98aaf049d1802021-11-19T00:01:31ZReverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes2168-673410.1109/JEDS.2020.2963902https://doaj.org/article/1db380d030cd45cd831b98aaf049d1802020-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8949530/https://doaj.org/toc/2168-6734Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after regrowth. According to X-ray diffraction results, the etch-then-regrow process caused a slight increase of defect density due to increased edge dislocations. Schottky parameters extracted from forward current-voltage curves, such as turn-on voltages of 0.74 V and 0.72 V, ideality factors of 1.07 and 1.10, and barrier heights of 1.07 eV and 1.05 eV, were obtained for diodes based on the regrown and as-grown samples, respectively. The breakdown voltage of the regrown sample was much lower than the as-grown sample. The regrowth interface can be regarded as a n-doping GaN layer due to the high interface charge density after the etch-then-regrown process. This equivalent <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula>-doping GaN layer reduced the effective thickness of the UID-GaN under the Schottky contact thus causing lower breakdown voltage for the regrown sample. Poole-Frenkel emission and trap-assisted tunneling processes were responsible for the leakage of both as-grown and regrown samples according to the temperature dependence of the reverse currents.Kai FuHouqiang FuXuanqi HuangTsung-Han YangChi-Yin ChengPrudhvi Ram PeriHong ChenJossue MontesChen YangJingan ZhouXuguang DengXin QiDavid J. SmithStephen M. GoodnickYuji ZhaoIEEEarticleSchottky barrier diodesGaN-on-GaNregrowleakageinterfaceElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 8, Pp 74-83 (2020) |
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| language |
EN |
| topic |
Schottky barrier diodes GaN-on-GaN regrow leakage interface Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| spellingShingle |
Schottky barrier diodes GaN-on-GaN regrow leakage interface Electrical engineering. Electronics. Nuclear engineering TK1-9971 Kai Fu Houqiang Fu Xuanqi Huang Tsung-Han Yang Chi-Yin Cheng Prudhvi Ram Peri Hong Chen Jossue Montes Chen Yang Jingan Zhou Xuguang Deng Xin Qi David J. Smith Stephen M. Goodnick Yuji Zhao Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes |
| description |
Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after regrowth. According to X-ray diffraction results, the etch-then-regrow process caused a slight increase of defect density due to increased edge dislocations. Schottky parameters extracted from forward current-voltage curves, such as turn-on voltages of 0.74 V and 0.72 V, ideality factors of 1.07 and 1.10, and barrier heights of 1.07 eV and 1.05 eV, were obtained for diodes based on the regrown and as-grown samples, respectively. The breakdown voltage of the regrown sample was much lower than the as-grown sample. The regrowth interface can be regarded as a n-doping GaN layer due to the high interface charge density after the etch-then-regrown process. This equivalent <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula>-doping GaN layer reduced the effective thickness of the UID-GaN under the Schottky contact thus causing lower breakdown voltage for the regrown sample. Poole-Frenkel emission and trap-assisted tunneling processes were responsible for the leakage of both as-grown and regrown samples according to the temperature dependence of the reverse currents. |
| format |
article |
| author |
Kai Fu Houqiang Fu Xuanqi Huang Tsung-Han Yang Chi-Yin Cheng Prudhvi Ram Peri Hong Chen Jossue Montes Chen Yang Jingan Zhou Xuguang Deng Xin Qi David J. Smith Stephen M. Goodnick Yuji Zhao |
| author_facet |
Kai Fu Houqiang Fu Xuanqi Huang Tsung-Han Yang Chi-Yin Cheng Prudhvi Ram Peri Hong Chen Jossue Montes Chen Yang Jingan Zhou Xuguang Deng Xin Qi David J. Smith Stephen M. Goodnick Yuji Zhao |
| author_sort |
Kai Fu |
| title |
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes |
| title_short |
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes |
| title_full |
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes |
| title_fullStr |
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes |
| title_full_unstemmed |
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes |
| title_sort |
reverse leakage analysis for as-grown and regrown vertical gan-on-gan schottky barrier diodes |
| publisher |
IEEE |
| publishDate |
2020 |
| url |
https://doaj.org/article/1db380d030cd45cd831b98aaf049d180 |
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