Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after regrowth. According to X-ray diffraction...

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Autores principales:	Kai Fu, Houqiang Fu, Xuanqi Huang, Tsung-Han Yang, Chi-Yin Cheng, Prudhvi Ram Peri, Hong Chen, Jossue Montes, Chen Yang, Jingan Zhou, Xuguang Deng, Xin Qi, David J. Smith, Stephen M. Goodnick, Yuji Zhao
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2020
Materias:	Schottky barrier diodes GaN-on-GaN regrow leakage interface Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/1db380d030cd45cd831b98aaf049d180
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Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

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