Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr
The galvanomagnetic effects ( ≤0.1 T, 4.2≤ ≤300 K) in the -Pb1-xGexTe:Cr alloys under variation of alloy composition (0.02≤x≤0.10) and under hydrostatic compression up to 17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insul...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/1db712275a60418694fb6265ac9a90dd |
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| Sumario: | The galvanomagnetic effects ( ≤0.1 T, 4.2≤ ≤300 K) in the -Pb1-xGexTe:Cr alloys under variation of alloy composition (0.02≤x≤0.10) and under hydrostatic compression up to
17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insulator-metal transition, induced by hydrostatic compression
in Pb1-xGexTe:Cr (x=0.10) alloy, were revealed. Using the experimental data in the frame of
two-band Kane dispersion relation the composition and pressure dependences of the free electron concentration and the Fermi level position were calculated. The composition and pressure
coefficients of the chromium deep level movement were obtained and the models of the electronic structure reconstruction were built.
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