Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr

The galvanomagnetic effects ( ≤0.1 T, 4.2≤ ≤300 K) in the -Pb1-xGexTe:Cr alloys under variation of alloy composition (0.02≤x≤0.10) and under hydrostatic compression up to 17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insul...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Skipetrov, E., Plastun, A., Kovalev, B., Skipetrova, L., Topcevskaia, T., Sliniko, V.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/1db712275a60418694fb6265ac9a90dd
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:1db712275a60418694fb6265ac9a90dd
record_format	dspace
spelling	oai:doaj.org-article:1db712275a60418694fb6265ac9a90dd2021-11-21T12:08:32ZElectronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr2537-63651810-648Xhttps://doaj.org/article/1db712275a60418694fb6265ac9a90dd2007-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3685https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The galvanomagnetic effects ( ≤0.1 T, 4.2≤ ≤300 K) in the -Pb1-xGexTe:Cr alloys under variation of alloy composition (0.02≤x≤0.10) and under hydrostatic compression up to 17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insulator-metal transition, induced by hydrostatic compression in Pb1-xGexTe:Cr (x=0.10) alloy, were revealed. Using the experimental data in the frame of two-band Kane dispersion relation the composition and pressure dependences of the free electron concentration and the Fermi level position were calculated. The composition and pressure coefficients of the chromium deep level movement were obtained and the models of the electronic structure reconstruction were built. Skipetrov, E.Plastun, A.Kovalev, B.Skipetrova, L.Topcevskaia, T.Sliniko, V.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 1, Pp 62-66 (2007)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Skipetrov, E. Plastun, A. Kovalev, B. Skipetrova, L. Topcevskaia, T. Sliniko, V. Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr
description	The galvanomagnetic effects ( ≤0.1 T, 4.2≤ ≤300 K) in the -Pb1-xGexTe:Cr alloys under variation of alloy composition (0.02≤x≤0.10) and under hydrostatic compression up to 17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insulator-metal transition, induced by hydrostatic compression in Pb1-xGexTe:Cr (x=0.10) alloy, were revealed. Using the experimental data in the frame of two-band Kane dispersion relation the composition and pressure dependences of the free electron concentration and the Fermi level position were calculated. The composition and pressure coefficients of the chromium deep level movement were obtained and the models of the electronic structure reconstruction were built.
format	article
author	Skipetrov, E. Plastun, A. Kovalev, B. Skipetrova, L. Topcevskaia, T. Sliniko, V.
author_facet	Skipetrov, E. Plastun, A. Kovalev, B. Skipetrova, L. Topcevskaia, T. Sliniko, V.
author_sort	Skipetrov, E.
title	Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr
title_short	Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr
title_full	Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr
title_fullStr	Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr
title_full_unstemmed	Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr
title_sort	electronic structure of diluted magnetic semiconductors pb1-xgexte:cr
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2007
url	https://doaj.org/article/1db712275a60418694fb6265ac9a90dd
work_keys_str_mv	AT skipetrove electronicstructureofdilutedmagneticsemiconductorspb1xgextecr AT plastuna electronicstructureofdilutedmagneticsemiconductorspb1xgextecr AT kovalevb electronicstructureofdilutedmagneticsemiconductorspb1xgextecr AT skipetroval electronicstructureofdilutedmagneticsemiconductorspb1xgextecr AT topcevskaiat electronicstructureofdilutedmagneticsemiconductorspb1xgextecr AT slinikov electronicstructureofdilutedmagneticsemiconductorspb1xgextecr
_version_	1718419171841146880

Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr

Ejemplares similares