Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiO<sub>x</sub> Tunnel Junction

Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasiti...

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Autores principales: Lucia V. Mercaldo, Eugenia Bobeico, Antonella De Maria, Marco Della Noce, Manuela Ferrara, Vera La Ferrara, Laura Lancellotti, Gabriella Rametta, Gennaro V. Sannino, Iurie Usatii, Paola Delli Veneri
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/1e79f73d6ab542fd9641c477143c5d5e
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Sumario:Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasitic p/n junctions. We investigated monolithic perovskite/silicon-heterojunction (SHJ) tandem solar cells with a p/n nanocrystalline silicon/silicon-oxide recombination junction for improved infrared light management. This design can additionally provide for resilience to shunts and simplified cell processing. We probed modified SHJ solar cells, made from double-side polished n-type Si wafers, which included the proposed front-side p/n tunnel junction with the p-type film simultaneously functioning as selective charge transport layer for the SHJ bottom cell, trying different thicknesses for the n-type layer. Full tandem devices were then tested, by applying a planar n-i-p mixed-cation mixed-halide perovskite top cell, fabricated via low temperature solution methods to be compatible with the processed Si wafer. We demonstrate the feasibility of this tandem cell configuration over a 1 cm<sup>2</sup> area with negligible J-V hysteresis and a V<sub>OC</sub> ~1.8 V, matching the sum of the V<sub>OC</sub>-s contributed by the two components.