Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiO<sub>x</sub> Tunnel Junction
Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasiti...
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2021
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oai:doaj.org-article:1e79f73d6ab542fd9641c477143c5d5e2021-11-25T17:27:52ZMonolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiO<sub>x</sub> Tunnel Junction10.3390/en142276841996-1073https://doaj.org/article/1e79f73d6ab542fd9641c477143c5d5e2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1073/14/22/7684https://doaj.org/toc/1996-1073Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasitic p/n junctions. We investigated monolithic perovskite/silicon-heterojunction (SHJ) tandem solar cells with a p/n nanocrystalline silicon/silicon-oxide recombination junction for improved infrared light management. This design can additionally provide for resilience to shunts and simplified cell processing. We probed modified SHJ solar cells, made from double-side polished n-type Si wafers, which included the proposed front-side p/n tunnel junction with the p-type film simultaneously functioning as selective charge transport layer for the SHJ bottom cell, trying different thicknesses for the n-type layer. Full tandem devices were then tested, by applying a planar n-i-p mixed-cation mixed-halide perovskite top cell, fabricated via low temperature solution methods to be compatible with the processed Si wafer. We demonstrate the feasibility of this tandem cell configuration over a 1 cm<sup>2</sup> area with negligible J-V hysteresis and a V<sub>OC</sub> ~1.8 V, matching the sum of the V<sub>OC</sub>-s contributed by the two components.Lucia V. MercaldoEugenia BobeicoAntonella De MariaMarco Della NoceManuela FerraraVera La FerraraLaura LancellottiGabriella RamettaGennaro V. SanninoIurie UsatiiPaola Delli VeneriMDPI AGarticlemonolithic perovskite/silicon tandem solar cellstriple cation perovskitesilicon heterojunctiontunnel recombination junctiondoped nanocrystalline silicon oxideTechnologyTENEnergies, Vol 14, Iss 7684, p 7684 (2021) |
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monolithic perovskite/silicon tandem solar cells triple cation perovskite silicon heterojunction tunnel recombination junction doped nanocrystalline silicon oxide Technology T |
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monolithic perovskite/silicon tandem solar cells triple cation perovskite silicon heterojunction tunnel recombination junction doped nanocrystalline silicon oxide Technology T Lucia V. Mercaldo Eugenia Bobeico Antonella De Maria Marco Della Noce Manuela Ferrara Vera La Ferrara Laura Lancellotti Gabriella Rametta Gennaro V. Sannino Iurie Usatii Paola Delli Veneri Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiO<sub>x</sub> Tunnel Junction |
description |
Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasitic p/n junctions. We investigated monolithic perovskite/silicon-heterojunction (SHJ) tandem solar cells with a p/n nanocrystalline silicon/silicon-oxide recombination junction for improved infrared light management. This design can additionally provide for resilience to shunts and simplified cell processing. We probed modified SHJ solar cells, made from double-side polished n-type Si wafers, which included the proposed front-side p/n tunnel junction with the p-type film simultaneously functioning as selective charge transport layer for the SHJ bottom cell, trying different thicknesses for the n-type layer. Full tandem devices were then tested, by applying a planar n-i-p mixed-cation mixed-halide perovskite top cell, fabricated via low temperature solution methods to be compatible with the processed Si wafer. We demonstrate the feasibility of this tandem cell configuration over a 1 cm<sup>2</sup> area with negligible J-V hysteresis and a V<sub>OC</sub> ~1.8 V, matching the sum of the V<sub>OC</sub>-s contributed by the two components. |
format |
article |
author |
Lucia V. Mercaldo Eugenia Bobeico Antonella De Maria Marco Della Noce Manuela Ferrara Vera La Ferrara Laura Lancellotti Gabriella Rametta Gennaro V. Sannino Iurie Usatii Paola Delli Veneri |
author_facet |
Lucia V. Mercaldo Eugenia Bobeico Antonella De Maria Marco Della Noce Manuela Ferrara Vera La Ferrara Laura Lancellotti Gabriella Rametta Gennaro V. Sannino Iurie Usatii Paola Delli Veneri |
author_sort |
Lucia V. Mercaldo |
title |
Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiO<sub>x</sub> Tunnel Junction |
title_short |
Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiO<sub>x</sub> Tunnel Junction |
title_full |
Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiO<sub>x</sub> Tunnel Junction |
title_fullStr |
Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiO<sub>x</sub> Tunnel Junction |
title_full_unstemmed |
Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiO<sub>x</sub> Tunnel Junction |
title_sort |
monolithic perovskite/silicon-heterojunction tandem solar cells with nanocrystalline si/sio<sub>x</sub> tunnel junction |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/1e79f73d6ab542fd9641c477143c5d5e |
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