Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells

Abstract A type-II InAs/AlAs $$_{0.16}$$ 0.16 Sb $$_{0.84}$$ 0.84 multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with phot...

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Autores principales:	Herath P. Piyathilaka, Rishmali Sooriyagoda, Hamidreza Esmaielpour, Vincent R. Whiteside, Tetsuya D. Mishima, Michael B. Santos, Ian R. Sellers, Alan D. Bristow
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/1e99a58daf5f4b2d84974319b684905e
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spelling	oai:doaj.org-article:1e99a58daf5f4b2d84974319b684905e2021-12-02T16:49:46ZHot-carrier dynamics in InAs/AlAsSb multiple-quantum wells10.1038/s41598-021-89815-y2045-2322https://doaj.org/article/1e99a58daf5f4b2d84974319b684905e2021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89815-yhttps://doaj.org/toc/2045-2322Abstract A type-II InAs/AlAs $$_{0.16}$$ 0.16 Sb $$_{0.84}$$ 0.84 multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the band gap, probed with a terahertz probe pulse. The transient terahertz absorption is characterized by a multi-rise, multi-decay function that captures long-lived decay times and a metastable state for an excess-photon energy of $$>100$$ > 100 meV. For sufficient excess-photon energy, excitation of the metastable state is followed by a transition to the long-lived states. Excitation dependence of the long-lived states map onto a nearly-direct band gap ( $$E{_g}$$ E g ) density of states with an Urbach tail below $$E{_g}$$ E g . As temperature increases, the long-lived decay times increase $$<E{_g}$$ < E g , due to the increased phonon interaction of the unintentional defect states, and by phonon stabilization of the hot carriers $$>E{_g}$$ > E g . Additionally, Auger (and/or trap-assisted Auger) scattering above the onset of the plateau may also contribute to longer hot-carrier lifetimes. Meanwhile, the initial decay component shows strong dependence on excitation energy and temperature, reflecting the complicated initial transfer of energy between valence-band and defect states, indicating methods to further prolong hot carriers for technological applications.Herath P. PiyathilakaRishmali SooriyagodaHamidreza EsmaielpourVincent R. WhitesideTetsuya D. MishimaMichael B. SantosIan R. SellersAlan D. BristowNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Herath P. Piyathilaka Rishmali Sooriyagoda Hamidreza Esmaielpour Vincent R. Whiteside Tetsuya D. Mishima Michael B. Santos Ian R. Sellers Alan D. Bristow Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells
description	Abstract A type-II InAs/AlAs $$_{0.16}$$ 0.16 Sb $$_{0.84}$$ 0.84 multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the band gap, probed with a terahertz probe pulse. The transient terahertz absorption is characterized by a multi-rise, multi-decay function that captures long-lived decay times and a metastable state for an excess-photon energy of $$>100$$ > 100 meV. For sufficient excess-photon energy, excitation of the metastable state is followed by a transition to the long-lived states. Excitation dependence of the long-lived states map onto a nearly-direct band gap ( $$E{_g}$$ E g ) density of states with an Urbach tail below $$E{_g}$$ E g . As temperature increases, the long-lived decay times increase $$<E{_g}$$ < E g , due to the increased phonon interaction of the unintentional defect states, and by phonon stabilization of the hot carriers $$>E{_g}$$ > E g . Additionally, Auger (and/or trap-assisted Auger) scattering above the onset of the plateau may also contribute to longer hot-carrier lifetimes. Meanwhile, the initial decay component shows strong dependence on excitation energy and temperature, reflecting the complicated initial transfer of energy between valence-band and defect states, indicating methods to further prolong hot carriers for technological applications.
format	article
author	Herath P. Piyathilaka Rishmali Sooriyagoda Hamidreza Esmaielpour Vincent R. Whiteside Tetsuya D. Mishima Michael B. Santos Ian R. Sellers Alan D. Bristow
author_facet	Herath P. Piyathilaka Rishmali Sooriyagoda Hamidreza Esmaielpour Vincent R. Whiteside Tetsuya D. Mishima Michael B. Santos Ian R. Sellers Alan D. Bristow
author_sort	Herath P. Piyathilaka
title	Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells
title_short	Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells
title_full	Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells
title_fullStr	Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells
title_full_unstemmed	Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells
title_sort	hot-carrier dynamics in inas/alassb multiple-quantum wells
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/1e99a58daf5f4b2d84974319b684905e
work_keys_str_mv	AT herathppiyathilaka hotcarrierdynamicsininasalassbmultiplequantumwells AT rishmalisooriyagoda hotcarrierdynamicsininasalassbmultiplequantumwells AT hamidrezaesmaielpour hotcarrierdynamicsininasalassbmultiplequantumwells AT vincentrwhiteside hotcarrierdynamicsininasalassbmultiplequantumwells AT tetsuyadmishima hotcarrierdynamicsininasalassbmultiplequantumwells AT michaelbsantos hotcarrierdynamicsininasalassbmultiplequantumwells AT ianrsellers hotcarrierdynamicsininasalassbmultiplequantumwells AT alandbristow hotcarrierdynamicsininasalassbmultiplequantumwells
_version_	1718383201431322624

Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells

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