Low temperature a/b nanotwins in Ni50Mn25+x Ga25−x Heusler alloys
Abstract We have found low temperature a/b nanotwins having (110) twinning plane in a five-layered modulated martensite phase of Ni50Mn25+x Ga25−x (at. %) Heusler alloys and identified the particular region in phase diagram where the nanotwinning occurs. Evolution of the structure with decreasing te...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/1ef284998d3f44e7910b539cadb0824e |
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| Sumario: | Abstract We have found low temperature a/b nanotwins having (110) twinning plane in a five-layered modulated martensite phase of Ni50Mn25+x Ga25−x (at. %) Heusler alloys and identified the particular region in phase diagram where the nanotwinning occurs. Evolution of the structure with decreasing temperature was studied by X-ray diffraction using single crystals exhibiting magnetic shape memory effect. The merging of (400) and (040) lines upon cooling for 2.6 < x < 3.5 indicated a/b nanotwinning originating from the refinement of initially coarse a/b twins. Refinement of the twins with decreasing temperature was observed directly using scanning electron microscopy. The prerequisite for nanotwinning is an extremely low twin boundary energy, which we estimated using first-principles calculations to be 0.16 meV/Å2. As the nanotwinning distorts the relation between the crystal lattice and the X-ray diffraction pattern, it should be taken into consideration in structural studies of Ni-Mn-Ga Heusler alloys. |
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