Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4

Abstract Magnetocapacitance (MC) effect, observed in a wide range of materials and devices, such as multiferroic materials and spintronic devices, has received considerable attention due to its interesting physical properties and practical applications. A normal MC effect exhibits a higher capacitan...

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Autores principales:	Hideo Kaiju, Taro Nagahama, Shun Sasaki, Toshihiro Shimada, Osamu Kitakami, Takahiro Misawa, Masaya Fujioka, Junji Nishii, Gang Xiao
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/1f68e4b39a804eca8998ece12e570d43
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spelling	oai:doaj.org-article:1f68e4b39a804eca8998ece12e570d432021-12-02T12:30:45ZInverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O410.1038/s41598-017-02361-42045-2322https://doaj.org/article/1f68e4b39a804eca8998ece12e570d432017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02361-4https://doaj.org/toc/2045-2322Abstract Magnetocapacitance (MC) effect, observed in a wide range of materials and devices, such as multiferroic materials and spintronic devices, has received considerable attention due to its interesting physical properties and practical applications. A normal MC effect exhibits a higher capacitance when spins in the electrodes are parallel to each other and a lower capacitance when spins are antiparallel. Here we report an inverse tunnel magnetocapacitance (TMC) effect for the first time in Fe/AlOx/Fe3O4 magnetic tunnel junctions (MTJs). The inverse TMC reaches up to 11.4% at room temperature and the robustness of spin polarization is revealed in the bias dependence of the inverse TMC. Excellent agreement between theory and experiment is achieved for the entire applied frequency range and the wide bipolar bias regions using Debye-Fröhlich model (combined with the Zhang formula and parabolic barrier approximation) and spin-dependent drift-diffusion model. Furthermore, our theoretical calculations predict that the inverse TMC effect could potentially reach 150% in MTJs with a positive and negative spin polarization of 65% and −42%, respectively. These theoretical and experimental findings provide a new insight into both static and dynamic spin-dependent transports. They will open up broader opportunities for device applications, such as magnetic logic circuits and multi-valued memory devices.Hideo KaijuTaro NagahamaShun SasakiToshihiro ShimadaOsamu KitakamiTakahiro MisawaMasaya FujiokaJunji NishiiGang XiaoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hideo Kaiju Taro Nagahama Shun Sasaki Toshihiro Shimada Osamu Kitakami Takahiro Misawa Masaya Fujioka Junji Nishii Gang Xiao Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4
description	Abstract Magnetocapacitance (MC) effect, observed in a wide range of materials and devices, such as multiferroic materials and spintronic devices, has received considerable attention due to its interesting physical properties and practical applications. A normal MC effect exhibits a higher capacitance when spins in the electrodes are parallel to each other and a lower capacitance when spins are antiparallel. Here we report an inverse tunnel magnetocapacitance (TMC) effect for the first time in Fe/AlOx/Fe3O4 magnetic tunnel junctions (MTJs). The inverse TMC reaches up to 11.4% at room temperature and the robustness of spin polarization is revealed in the bias dependence of the inverse TMC. Excellent agreement between theory and experiment is achieved for the entire applied frequency range and the wide bipolar bias regions using Debye-Fröhlich model (combined with the Zhang formula and parabolic barrier approximation) and spin-dependent drift-diffusion model. Furthermore, our theoretical calculations predict that the inverse TMC effect could potentially reach 150% in MTJs with a positive and negative spin polarization of 65% and −42%, respectively. These theoretical and experimental findings provide a new insight into both static and dynamic spin-dependent transports. They will open up broader opportunities for device applications, such as magnetic logic circuits and multi-valued memory devices.
format	article
author	Hideo Kaiju Taro Nagahama Shun Sasaki Toshihiro Shimada Osamu Kitakami Takahiro Misawa Masaya Fujioka Junji Nishii Gang Xiao
author_facet	Hideo Kaiju Taro Nagahama Shun Sasaki Toshihiro Shimada Osamu Kitakami Takahiro Misawa Masaya Fujioka Junji Nishii Gang Xiao
author_sort	Hideo Kaiju
title	Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4
title_short	Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4
title_full	Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4
title_fullStr	Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4
title_full_unstemmed	Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4
title_sort	inverse tunnel magnetocapacitance in fe/al-oxide/fe3o4
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/1f68e4b39a804eca8998ece12e570d43
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Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4

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