Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

Electron or hole doping in a Mott insulator leads to superconductivity, with the mechanism obscured by multi-orbital Fermi surface reconstructions. Here, Kawasugi et al. report doping dependent Hall coefficients and resistivity anisotropy of an organic Mott insulator, revealing doping asymmetry of r...

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Autores principales: Yoshitaka Kawasugi, Kazuhiro Seki, Yusuke Edagawa, Yoshiaki Sato, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto, Reizo Kato
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/1f80afa2a91645da93eb651b66ff72ed
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Sumario:Electron or hole doping in a Mott insulator leads to superconductivity, with the mechanism obscured by multi-orbital Fermi surface reconstructions. Here, Kawasugi et al. report doping dependent Hall coefficients and resistivity anisotropy of an organic Mott insulator, revealing doping asymmetry of reconstructed Fermi surface of a single electronic orbital.